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J. Appl. Phys. 105, 123919 (2009); http://dx.doi.org/10.1063/1.3153983 (3 pages)

A reproducible process for mesoscopic superconducting indium contacts to GaAs/AlGaAs heterostructures

S. Boulay1, J. Dufouleur1, P. Roche2, U. Gennser1, A. Cavanna1, and D. Mailly1

1Laboratoire de Photonique et Nanostructures, CNRS, Route de Nozay, F-91460 Marcoussis, France
2Nanoelectronics Group, CEA-SPEC, Ormes des Merisiers, 91191 Gif-sur-Yvette, France

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(Received 10 January 2009; accepted 22 May 2009; published online 24 June 2009)

In this report we present a procedure to fabricate high transmissive superconducting (S) contacts by diffusing indium into GaAs/AlxGa1−xAs based high-mobility two-dimensional electron gas (2DEG). We use a thermostable trilayer resist for indium lift-off. By doing electrical measurements at low temperature and transmission electronic microscopy observations, we show that the current through the S/2DEG interface is carried by a few number of localized indium filaments providing a good contact with the 2DEG. The low dimensional nature of those filaments is characterized by phase slip centers in the I(V) curve of a shunted S/2DEG/S junction.

© 2009 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. SAMPLE FABRICATION
  3. RESULTS AND DISCUSSION
  4. CONCLUSION

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KEYWORDS and PACS

PACS

  • 73.40.Kp

    III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 66.30.H-

    Self-diffusion and ionic conduction in nonmetals

  • 74.25.F-

    Transport properties

  • 73.40.Ns

    Metal-nonmetal contacts

  • 74.70.Ad

    Metals; alloys and binary compounds (including A15, MgB2, etc.)

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

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