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1 Dec 2008

Volume 104, Issue 11, Articles (11xxxx)

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Thermal conductivity of Si/SiGe superlattice films

Chun-Kai Liu, Chih-Kuang Yu, Heng-Chieh Chien, Sheng-Liang Kuo, Chung-Yen Hsu, Ming-Ji Dai, Guang-Li Luo, Shih-Chiang Huang, and Mei-Jiau Huang

J. Appl. Phys. 104, 114301 (2008); http://dx.doi.org/10.1063/1.3032602 (8 pages) | Cited 4 times

Online Publication Date: 1 December 2008

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We have evaluated the thermal conductivity of Si/SiGe superlattice films by theoretical analysis and experiment. In experiments, the ultrahigh vacuum chemical vapor deposition is employed to form the Si/Si0.71Ge0.29 and Si/Si0.8Ge0.2 superlattice films. The cross-plane thermal conductivities of these superlattice films are measured based on the 3ω method. In the theoretical analysis, the phonon transport in Si/Si1−xGex superlattice film is explored by solving the phonon Boltzmann transport equation. The dependence of the thermal conductivity of the Si/Si1−xGex superlattice films on the superlattice period, the ratio of layer thicknesses, and the interface roughness is of interest. The calculations show that when the layer thickness is on the order of one percentage of the mean free path or even thinner, the phonons encounter few intrinsic scatterings and consequently concentrate in the directions having high transmissivities. Nonlinear temperature distributions are observed near the interfaces, arising from the size confinement effect and resulting in a slight increase in the film thermal resistances. The interface resistance due to the interface scattering/roughness, which is nearly independent of the film thickness, nonetheless dominates the effective thermal conductivity, especially when the superlattice period is small. Finally the experimental measurements agree with the theoretical predictions if the specular fraction associated with the interface is properly taken.
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66.70.Df Metals, alloys, and semiconductors
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
68.65.Cd Superlattices
68.35.Ct Interface structure and roughness

Epitaxial growth of nickel on Si(100) by dc magnetron sputtering

W. Kreuzpaintner, M. Störmer, D. Lott, D. Solina, and A. Schreyer

J. Appl. Phys. 104, 114302 (2008); http://dx.doi.org/10.1063/1.3032383 (7 pages) | Cited 1 time

Online Publication Date: 2 December 2008

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The influence of the substrate temperature on the growth of highly textured Ni(111) and epitaxial Ni(200) with the relationships Ni[100]∥Si[110] and Ni(001)∥Si(001) on hydrogen terminated Si(100) wafer substrates by means of direct current magnetron sputtering is reported. In order to minimize crystal defect formation and to achieve a high quality epitaxial growth of Ni on Si, a two step deposition process was developed whereby different deposition conditions were used for an initial nickel seed layer and the remaining nickel film. The in-plane and out-of-plane structural properties of the films were investigated using x-ray scattering techniques, whereas magneto-optical Kerr effect and neutron reflectometry were used to confirm the magnetic nature of the epitaxially deposited nickel films.
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68.55.at Other materials
81.15.Cd Deposition by sputtering
78.20.Ls Magneto-optical effects
78.70.Ck X-ray scattering
78.66.Bz Metals and metallic alloys
68.55.jm Texture

Scanning near-field optical microscopy study of metallic square hole array nanostructures

Jiang-Yan Li, Zhi-Yuan Li, Hai-Fang Yang, and Ai-Zi Jin

J. Appl. Phys. 104, 114303 (2008); http://dx.doi.org/10.1063/1.3032902 (10 pages) | Cited 2 times

Online Publication Date: 2 December 2008

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We fabricate periodic arrays of simple-square and composite-square air hole nanostructures on a 120 nm thick Au film deposited on glass substrate by focused ion beam technology and study their optical properties by examining the optical near-field distribution via scanning near-field optical microscopy in the near-infrared region. The simple-square nanostructure only contains one square air hole in each unit cell, while the composite-square one contains the same size square air hole in the center and eight smaller square air holes in the periphery. The measured optical near-field patterns for the two nanostructures show very different distribution features. High intensity light spots locate within the central square air hole in the simple-square structure, while they sit at the peripheral smaller square air holes in the composite-square structure. Numerical simulations based on the plane-wave transfer-matrix method have been carried out to analyze the optical near-field patterns for the two metallic nanostructures and agree well with the experimental data. The results indicate that light interaction with metallic nanostructures is very sensitive to even a small change in the subtle geometrical feature. Meanwhile, by comparing near-field patterns with dielectric nanostructures theoretically, we also find that optical confinement is better for gold nanostructures than for dielectric nanostructures.
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78.66.Bz Metals and metallic alloys
47.53.+n Fractals in fluid dynamics
42.70.Qs Photonic bandgap materials

Variation in electrical resistance versus strain of an individual multiwalled carbon nanotube

Hoon-Sik Jang, Yun-Hee Lee, Ho-Jun Na, and Seung Hoon Nahm

J. Appl. Phys. 104, 114304 (2008); http://dx.doi.org/10.1063/1.3032905 (4 pages) | Cited 2 times

Online Publication Date: 2 December 2008

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The electrical resistance of an individual multiwalled carbon nanotube (MWCNT) as a function of mechanical strain was investigated inside a scanning electron microscope. The mechanical strain was applied to the MWCNT by a tungsten tip controlled by a nanomanipulator. The contact resistance between an individual MWCNT and the tungsten tip decreased with the addition of carbon deposition during e-beam exposure. The electrical resistance was significantly changed during the elongation process of the MWCNT and corresponded with the nanotube strain. The resistance increased abruptly at the beginning of the tube fracture. The strain sensitivities of two individual MWCNT were calculated to be about 25.2 and 25.9, respectively. The unique characteristics in electrical resistance variation for different displacements of an individual MWCNT could be used in a strain gauge for strain sensing of nanomaterials or a micromechanical device for sensing force or pressure. CNTs are very strong and highly flexible and would be ideal for these applications.
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07.10.-h Mechanical instruments and equipment
62.20.-x Mechanical properties of solids
73.63.Fg Nanotubes

Electrical properties measurements on individual carbon nanofibers by scanning spreading resistance microscopy

L. Fourdrinier, H. Le Poche, N. Chevalier, D. Mariolle, and E. Rouviere

J. Appl. Phys. 104, 114305 (2008); http://dx.doi.org/10.1063/1.3033491 (7 pages) | Cited 7 times

Online Publication Date: 2 December 2008

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Vertically aligned 850-nm-long carbon nanofibers (CNFs) are grown on a titanium nitride (TiN) layer by a radio-frequency plasma system at 560 °C. Electrical properties of individual CNFs are statistically determined by a current sensing atomic force microscopy mode. An interpretation based on electrical contact resistance model classically used to describe macroscopic observations, combined with a semiclassical approach commonly used for such nano-objects, is proposed here to explain dispersion in obtained values. Roughness of the TiN layer is responsible for this dispersion by varying contact surface between CNF and the TiN layer, while interface oxidation equally affects the transport by adding a barrier at the interface. Some CNFs exhibit very low resistances (few kilohms), implying that good contact is obtained between the nanofiber and the substrate, while others CNFs exhibit high resistance, attributed to local poor electrical contacts between CNFs and TiN layer.
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73.40.Cg Contact resistance, contact potential
68.37.Ps Atomic force microscopy (AFM)
81.65.Mq Oxidation
81.07.Bc Nanocrystalline materials

Secondary electron emission from freely supported nanowires

Makoto Suzuki, Kazuhiro Kumagai, Takashi Sekiguchi, Alan M. Cassell, Tsutomu Saito, and Cary Y. Yang

J. Appl. Phys. 104, 114306 (2008); http://dx.doi.org/10.1063/1.3032910 (6 pages) | Cited 4 times

Online Publication Date: 4 December 2008

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We present secondary electron (SE) emission results from freely supported carbon/silicon nitride (Si3N4) hybrid nanowires using scanning electron microscopy. We found that, contrary to bulk materials, the SE emission from insulating or electrically isolated metallic nanowires is strongly suppressed by the penetrating beam. A mechanism of the SE suppression by the positive specimen charging is proposed, which is based on a total emission yield calculation using the Monte Carlo technique. This finding provides an important basis for studying low-energy electron emission from nanostructures under a penetrating electron beam.
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79.20.Hx Electron impact: secondary emission
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Temperature-dependent photoluminescence and photoluminescence excitation of aluminum monodoped and aluminum-indium dual-doped ZnO nanorods

Shisheng Lin, Haiping He, Zhizhen Ye, Binghui Zhao, and Jingyun Huang

J. Appl. Phys. 104, 114307 (2008); http://dx.doi.org/10.1063/1.3033560 (7 pages) | Cited 5 times

Online Publication Date: 4 December 2008

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The authors report fabrication of aluminum monodoped ZnO (AlZnO) and aluminum-indium dual-doped ZnO (AlInZnO) nanorods arrays. Optical properties of AlZnO and AlInZnO nanorods are studied through temperature-dependent photoluminescence (PL) and PL excitation (PLE). Compared to AlInZnO nanorods, AlZnO nanorods possess better PL properties, as evidenced by a higher ratio of intensity of band-edge emission to green emission at 10 K and a higher PL intensity at room temperature. As supported by x-ray diffraction patterns, AlZnO nanorods also have higher crystallinity than AlInZnO nanorods. Indium doping induces a pronounced donor-acceptor pair transition of ∼ 3.22 eV at 10 K, the mechanism of which is discussed. Temperature-dependent energies of the A free exciton (FXA) and neutral donor bound exciton (D0X) are analyzed and the Einstein temperature is deduced to be ∼ 310 K. An activation energy of ∼ 8 meV is determined from the quenching of D0X as a function of temperature in AlInZnO nanorods. It is interpreted that nonradiative centers caused by indium segregation result in the small activation energy. Moreover, temperature-dependent PLE of AlZnO and AlInZnO nanorods reveals that the donor levels of aluminum and indium are 75 and 102 meV, respectively. Considering that the donor level of Al is shallower than that of In and that the optical and crystal properties of AlZnO nanorods are better than those of AlInZnO nanorods, aluminum is a better n-type dopant than indium for ZnO nanorods.
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78.55.Et II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
73.22.Lp Collective excitations
71.35.-y Excitons and related phenomena
61.72.uj III-V and II-VI semiconductors
71.55.Gs II-VI semiconductors

Manipulation of microparticles in colloidal liquids by Z-scan-based optical trapping

Jin Liu, Qiao-Feng Dai, Tian-Hua Feng, Hai-Ying Liu, Li-Jun Wu, Qi Guo, Wei Hu, Song-Hao Liu, Sheng Lan, Achanta Venu Gopal, and Vyacheslav A. Trofimov

J. Appl. Phys. 104, 114308 (2008); http://dx.doi.org/10.1063/1.3039454 (8 pages)

Online Publication Date: 8 December 2008

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Manipulation of microparticles in colloidal liquids by using Z-scan-based optical trapping is systematically investigated. A physical model for the creation and annihilation of ordered structures in Z-scan-based optical trapping is presented theoretically and verified experimentally. Disordered, ordered, and intermediate states appearing in Z-scan trapping experiments are discussed and the conditions for realizing phase transition and observing self-induced transparency are clarified. We experimentally demonstrate the high quality and good stability of the formed structures, the sequential trapping of individual microparticles, and the multiple trapping processes. The dependence of the quality of the formed structures on trapping power, scanning speed, and the size and material of microparticles are identified.
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42.50.Wk Mechanical effects of light on material media, microstructures and particles
82.70.Dd Colloids
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption

Fluence-dependent formation of Zn and ZnO nanoparticles by ion implantation and thermal oxidation: An attempt to control nanoparticle size

H. Amekura, M. Ohnuma, N. Kishimoto, Ch. Buchal, and S. Mantl

J. Appl. Phys. 104, 114309 (2008); http://dx.doi.org/10.1063/1.3014032 (8 pages) | Cited 6 times

Online Publication Date: 8 December 2008

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For possible control of the size of nanoparticles (NPs), the fluence-dependent formation of Zn and ZnO NPs by ion implantation with and without thermal oxidation was investigated by optical absorption spectroscopy, Rutherford backscattering spectrometry, and small-angle x-ray scattering (SAXS). The mean diameter and number density of Zn NPs in the as-implanted state in silica (SiO2) were determined by SAXS as 7 nm and 13×1017 cm−3, 12 nm and 3.8×1017 cm−3, and 12 nm and 3.2×1017 cm−3 for fluences of 0.50, 1.0, and 2.0×1017 ions/cm2, respectively. With increasing fluence, the mean diameter of the NPs increases and the number density decreases. However, an upper limit of the NP size and Zn concentration in SiO2 is observed above the fluence of 1.0×1017 ions/cm2 due to sputtering loss. Thermal annealing in oxygen gas at 700 °C for 1 h induces the transformation of Zn NPs to both ZnO NPs and the Zn2SiO4 phase. With decreasing fluence, the branching ratio to the ZnO component decreases. This is because the reaction between tentatively formed ZnO NPs and the SiO2 substrate is enhanced by the higher surface-to-volume ratio of smaller NPs. At a fluence of 0.20×1017 ions/cm2, almost no ZnO component was detected. The size control of Zn and ZnO NPs is therefore possible only in a limited fluence region.
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61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.16.-c Methods of micro- and nanofabrication and processing
78.30.Fs III-V and II-VI semiconductors
78.40.Fy Semiconductors
61.72.Cc Kinetics of defect formation and annealing
78.70.Ck X-ray scattering

Electronic properties of zigzag and armchair carbon nanotubes under uniaxial strain

Yi-Ray Chen, Cheng-I Weng, and Shih-Jye Sun

J. Appl. Phys. 104, 114310 (2008); http://dx.doi.org/10.1063/1.3033167 (7 pages)

Online Publication Date: 8 December 2008

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Molecular dynamics simulations and quantum transport theory are employed to study the electronic properties of various zigzag and armchair carbon nanotubes (CNTs) under uniaxial compressive and tensile strains. It is found that the transfer integral decreases as the tensional strain increases. Furthermore, in the (3N+1,0) and (3N,0) zigzag nanotubes, the current induced by the application of a suitable bias voltage varies linearly with the magnitude of the applied strain. Thus, these particular zigzag CNTs are suitable for use as nanoscale strain sensors. Furthermore, the wider detected ranges occur in the smaller diameter of (3N,0) and (3N+1,0) tubes. However, in (11,0) zigzag nanotube and (5,5) armchair nanotube, the variation in current is not in accordance with Ohm’s law with respect to variations in the applied strain. Specifically, the electronic resistance decreases with increasing strain in (11,0) zigzag nanotube, while the current variations in different strains show the irregular and small perturbation in (5,5) armchair nanotube. Accordingly, neither the (11,0) zigzag nanotube nor the (5,5) armchair nanotube is suitable for strain sensing applications, but the (5,5) armchair nanotube has a current with the stable property for a conducting wire.
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71.20.Tx Fullerenes and related materials; intercalation compounds
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations

Dislocation nucleation during nanoindentation of aluminum

R. J. Wagner, L. Ma, F. Tavazza, and L. E. Levine

J. Appl. Phys. 104, 114311 (2008); http://dx.doi.org/10.1063/1.3021305 (4 pages) | Cited 6 times

Online Publication Date: 8 December 2008

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Through multiscale simulations, we explore the influence of both smooth and atomically rough indenter tips on the nucleation of dislocations during nanoindentation of single-crystal aluminum. We model the long-range strain with finite element analysis using anisotropic linear elasticity. We then model a region near the indenter atomistically and perform molecular dynamics with an embedded atom method interatomic potential. We find that smooth indenters nucleate dislocations below the surface but rough indenters can nucleate dislocations both at the surface and below. Increasing temperature from 0 to 300 K creates prenucleation defects in the region of high stress and decreases the critical depth.
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61.72.Lk Linear defects: dislocations, disclinations
62.20.Qp Friction, tribology, and hardness
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Lattice and grain-boundary diffusion of As in Ni2Si

I. Blum, A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, J. L. Lábár, V. Carron, and C. Perrin

J. Appl. Phys. 104, 114312 (2008); http://dx.doi.org/10.1063/1.3035836 (8 pages) | Cited 5 times

Online Publication Date: 9 December 2008

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The diffusion coefficient of As in 260 nm thick polycrystalline Ni2Si layers has been measured both in grains and in grain boundaries (GBs). As was implanted in Ni2Si layers prepared via the reaction between a Si layer and a Ni layer deposited by magnetron sputtering on a (100) Si substrate covered with a SiO2 film. The As concentration profiles in the samples were measured using secondary ion mass spectroscopy before and after annealing (400–700 °C). The diffusion coefficients in the grains and the GBs have been determined using two-dimensional finite element simulations based on the Fisher model geometry. For short time annealing (1 h) and temperatures lower than 600 °C, lattice diffusion has not been observed. However, GB diffusion was evidenced for temperatures as low as 400 °C. For higher thermal budgets, As diffuses simultaneously in the volume of the grains and in the GBs. Lattice diffusion is characterized by a pre-exponential factor D0v ∼ 1.5×10−1 cm2 s−1 and an activation energy Qv ∼ 2.72±0.10 eV. In the case of GB diffusion, the triple product of the As segregation coefficient (s), the GB width (δ), and the diffusion coefficient (DGB) is found to be sδDGB = 9.0×10−3 exp(−3.07±0.15 eV/kT) cm3 s−1. Various types of simulations were used in order to support the discussion of the results.
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61.72.Mm Grain and twin boundaries
66.30.Fq Self-diffusion in metals, semimetals, and alloys
81.40.Gh Other heat and thermomechanical treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Influence of alloy components on electromagnetic characteristics of core/shell-type Fe–Ni nanoparticles

Bo Lu, Hao Huang, Xing Long Dong, Xue Feng Zhang, Jun Peng Lei, Jian Peng Sun, and Chuang Dong

J. Appl. Phys. 104, 114313 (2008); http://dx.doi.org/10.1063/1.3040006 (6 pages) | Cited 13 times

Online Publication Date: 12 December 2008

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Fe–Ni alloy nanoparticles with various alloy components were fabricated by a direct current arc-discharge method. By dispersing the nanoparticles homogeneously into a paraffin matrix, the complex permittivity (εr = εr′+iεr″) and permeability (μr = μr′+iμr″) of the nanoparticles have been investigated in the frequency range of 2–18 GHz and the effects of alloy components on the electromagnetic parameters were discussed. It is found that the permittivities of the nanoparticles are lower than those of the microscale counterparts and almost independent of frequency. The magnetic loss is attributed to natural resonance and the resonance peak shifts to high frequency range with the increase in Fe content. Better microwave absorption performances can be obtained by adjusting the composition and tailoring the core/shell structures to balance the electromagnetic parameters. The calculated results indicate that the Fe–Ni nanoparticles with 49 wt % Ni exhibit excellent electromagnetic wave (EMW) absorption properties (reflection loss <−20 dB) over the range of 7.6–16.0 GHz in the thickness of 1.02–1.70 mm. The mechanism of effective EMW introduction and attenuation is discussed on the basis of the experimental results.
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81.16.-c Methods of micro- and nanofabrication and processing
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
77.22.Ch Permittivity (dielectric function)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Nanoscale surface electrical properties of aluminum zinc oxide thin films investigated by scanning probe microscopy

Sy-Hann Chen, Chang-Feng Yu, Yung-Shao Lin, Wen-Jia Xie, Ting-Wei Hsu, and Din Ping Tsai

J. Appl. Phys. 104, 114314 (2008); http://dx.doi.org/10.1063/1.3042237 (6 pages) | Cited 12 times

Online Publication Date: 15 December 2008

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Conducting atomic force microscopy and scanning surface potential microscopy were adopted to study the nanoscale surface electrical properties of aluminum zinc oxide (AZO) films that were prepared by pulsed laser deposition (PLD) at various substrate temperatures for use as anode materials in polymer light-emitting diodes (PLEDs). Experimental results indicate that when substrate temperatures exceed 100 °C, the local conductivity and work function are positively correlated with the concentrations of Al dopant and O2− on AZO surface. When the substrate temperature is approximately 150 °C, the percentage coverage of conducting regions of the AZO surface and the mean work function are 90.20% and 4.85 eV, respectively. Additionally, both microcosmic uniformities meet the standard applied to PLEDs. This low-temperature condition for PLD significantly reduces the yield rate of impurities when AZO vacuum evaporation is performed on a plastic substrate, supporting various applications of AZO films.
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73.61.Ga II-VI semiconductors
81.05.Dz II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

The influence of the droplet composition on the vapor-liquid-solid growth of InAs nanowires on GaAs (mathmathmath)B by metal-organic vapor phase epitaxy

Jens Bauer, Volker Gottschalch, and Gerald Wagner

J. Appl. Phys. 104, 114315 (2008); http://dx.doi.org/10.1063/1.3033556 (6 pages) | Cited 7 times

Online Publication Date: 15 December 2008

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The heteroepitaxial growth of InAs nanowires (NWs) on GaAs (mathmathmath)B substrate was investigated by metal-organic vapor phase epitaxy. The vapor-liquid-solid (VLS) growth mechanism was applied with gold as seed material. InAs NW with two types of morphology were observed. The first morphology type exhibited a tapered NW shape. In a distinct region below the alloy particle the shape was influenced by the precursor surface diffusion. The NW growth was attributed to Au-rich liquid alloy particles containing gallium as a result of the initial Au–GaAs interaction. Differential scanning calorimetry measurements revealed the lowest eutectic temperature of the Au–Ga–In liquid alloy for different compositions. For a considerable amount of gallium inside the ternary alloy, the eutectic temperature was found to be below the InAs NW growth temperature window. A second type of morphology with a more columnlike shape was related to a very high indium fraction inside the liquid alloy particle during VLS growth. These NW exhibited a change in the side facet orientation from {math11} to {math10} below the droplet. Additionally, the sample structure was studied by transmission electron microscopy. A change in the InAs NW crystal structure from sphalerite-type to mainly wurtzite-type was observed with an increase in the growth temperature.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.Fx Diffusion; interface formation
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
61.66.Fn Inorganic compounds
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