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Journal of Applied Physics / Volume 103 / Issue 7 / PROCEEDINGS OF THE 52ND ANNUAL CONFERENCE ON MAGNETISM AND MAGNETIC MATERIALS / New Magnetic Materials, Devices, Instrumentation and Applications

J. Appl. Phys. 103, 07E931 (2008); http://dx.doi.org/10.1063/1.2839311 (3 pages)

MgO based picotesla field sensors

R. C. Chaves1,2, P. P. Freitas1,2, B. Ocker3, and W. Maass3

1INESC-Microsystems and Nanotechnologies (INESC-MN), R. Alves Redol 9-1, 1000-029 Lisbon, Portugal
2Physics Department, Instituto Superior Técnico (IST), Av. Rovisco Pais, 1049-001 Lisbon, Portugal
3Singulus Technologies AG, Hanauer Landstr. 103, 63796 Kahl∕Main, Germany

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(Received 12 September 2007; accepted 7 December 2007; published online 14 March 2008)

MgO magnetic tunnel junctions with RA = 150 Ω μm2 and tunnel magnetic resistance = 100% were patterned into pillars with different geometries with areas up to 2000 μm2. Sensors were incorporated in 500 nm thick Co94Zr3Nb4 flux guides with different shapes and free layer stabilization was achieved through internal (Co66Cr16Pt18 pads) and external longitudinal bias fields (3.5 mT). Sensitivities of 870%/mT were obtained in the center of the transfer curve. Noise levels of 97 pT/Hz0.5 at 10 Hz, 51 pT/Hz0.5 at 30 Hz, and 2 pT/Hz0.5 at 500 kHz were measured in the linear region of the transfer curve.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

magnesium compounds, magnetic sensors, magnetic tunnelling, magnetoresistive devices

PACS

  • 85.70.-w

    Magnetic devices

  • 07.55.-w

    Magnetic instruments and components

  • 07.07.Df

    Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2839311

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    A. S. Edelstein and G. A. Fischer, J. Appl. Phys. 91, 7795 (2002)JAPIAU000091000010007795000001.

    R. C. Chaves, P. P. Freitas, B. Ocker, and W. Maass, Appl. Phys. Lett. 91, 102504 (2007)APPLAB000091000010102504000001.

    S. Ikeda, J. Hayakawa, Y. M. Lee, T. Tanikawa, F. Matsukura, and H. Ohno, J. Appl. Phys. 99, 08A907 (2006)JAPIAU00009900000808A907000001.

    R. Ferreira, P. Wisniowski, P. P. Freitas, J. Langer, B. Ocker, and W. Maass, J. Appl. Phys. 99, 08K706 (2006)JAPIAU00009900000808K706000001.

    J. M. Almeida, R. Ferreira, P. P. Freitas, J. Langer, B. Ocker, and W. Maass, J. Appl. Phys. 99, 08B314 (2006)JAPIAU00009900000808B314000001.

    L. Jiang, E. R. Nowak, P. E. Scott, J. Johnson, J. M. Slaughter, J. J. Sun, and R. W. Dave, Phys. Rev. B 69, 054407 (2004).

    J. Scola, H. Polovy, C. Fermon, M. Pannetier-Lecoeur, G. Feng, K. Fahy, and J. M. D. Coey, Appl. Phys. Lett. 90, 252501 (2007)APPLAB000090000025252501000001.


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