HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition

Chen, P. T.; Sun, Y.; Kim, E.; McIntyre, P. C.; Tsai, W.; Garner, M.; Pianetta, P.; Nishi, Y.; Chui, C. O.

doi:doi:10.1063/1.2838471

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Electrical, optical, and structural characteristics of Al₂O₃ thin films prepared by pulsed ultrasonic sprayed pyrolysis

The optical, structural, and electrical characteristics of aluminum oxide thin films deposited by pulsed ultrasonic sprayed pyrolysis are reported. The films are deposited on crystalline silicon at temperatures from 400 to 550°C using a chemical solution of aluminum acetylacetonate, as source of aluminum, and N, N-dimethylformamide, as solvent. A H2O–NH4OH mist is supplied simultaneously during deposition to improve the films’ properties. The results showed that the properties of the as deposit...

Lead-free piezoceramics with giant strain in the system Bi_0.5Na_0.5TiO₃–BaTiO₃–K_0.5Na_0.5NbO₃. I. Structure and room temperature properties

Lead-free piezoelectric ceramics, (1−x−y)Bi0.5Na0.5TiO3–xBaTiO3–yK0.5Na0.5NbO3 (0.05 ⩽ x ⩽ 0.07 and 0.01 ⩽ y ⩽ 0.03), have been synthesized by a conventional solid state sintering method. The room temperature ferroelectric and piezoelectric properties of these ceramics were studied. Based on the measured properties, the ceramics were categorized into two groups: group I compositions having dominant ferroelectric order and group II compositions displaying mixed ferroelectric and antiferroelectri...

The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH₄)₂S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As₂O₃ formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out diffusion into the hafnia film were observed after a 450 °C postdeposition anneal and may be the origins for the electrically active defects. Transmission electron microscopy cross section images showed thicker HfO₂ films for a given precursor exposure on sulfur treated GaAs versus the nontreated sample. In addition, the valence-band and the conduction-band offsets at the HfO₂/GaAs interface were deduced to be 3.18 eV and a range of 0.87–1.36 eV, respectively. It appears that HCl+(NH₄)₂S treatments provide a superior chemical passivation for GaAs and initial surface for atomic layer deposition.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
1. GaAs surface characterization
2. HfO₂/S/GaAs interface characterization
3. Annealing on HfO₂/S/GaAs
4. Interface energy-band alignment
CONCLUSIONS

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KEYWORDS and PACS

Keywords

annealing, atomic layer deposition, conduction bands, dielectric thin films, hafnium compounds, interface states, passivation, photoelectron spectra, transmission electron microscopy, valence bands

PACS

77.55.-g

Dielectric thin films
81.15.-z

Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh

Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.aj

Insulators
68.55.Ln

Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.At

Surface states, band structure, electron density of states

ARTICLE DATA

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http://dx.doi.org/10.1063/1.2838471

PUBLICATION DATA

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0021-8979 (print)

1089-7550 (online)

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American Institute of Physics

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