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Journal of Applied Physics / Volume 103 / Issue 12 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

J. Appl. Phys. 103, 123514 (2008); http://dx.doi.org/10.1063/1.2940739 (6 pages)

Photoluminescence study of AgGaSe2, AgGa0.9In0.1Se2, and AgGa0.8In0.2Se2 crystals grown by the horizontal Bridgman technique

Yunlong Cui1, Utpal N. Roy1, Arnold Burger1, and Jonathan T. Goldstein2

1Physics Department, Fisk University, Nashville, Tennessee 37208, USA
2Air Force Research Laboratory, Wright Patterson Air Force Base (WPAFB), Ohio 45433, USA

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(Received 24 January 2008; accepted 13 April 2008; published online 18 June 2008)

AgGaSe2, AgGa0.9In0.1Se2, and AgGa0.8In0.2Se2 single crystals grown by the horizontal Bridgman technique were investigated using photoluminescence (PL) at temperatures varied from 8 to 300 K. For the AgGaSe2 crystals, free exciton (FE), exciton bound to neutral donor (D0, X), and edge emissions including donor-acceptor pair (DAP) and free electron to neutral acceptor (e, A0) transitions were observed. Two donor levels with binding energies of 18 and 39 meV and two acceptor levels with 61 and 117 meV were observed. The FE peak positions of the AgGaSe2 were found to be blueshifted when the samples were illuminated with higher laser intensity. This behavior was more pronounced at higher temperature when the peaks were also significantly broadened. For the AgGa0.9In0.1Se2 crystals, three DAP emission peaks at 1.673, 1.570, and 1.545 eV were observed at 8 K. The excitonic peaks were not observed below 100 K because they were overshadowed by the 1.673 eV DAP emission. For the AgGa0.8In0.2Se2 crystal, the excitonic peak was barely resolved in the PL spectra at 9 K, and only two shallow defect levels were shown. The temperature coefficients of the band-gap energies of the crystals were measured. The thermal expansion effect of the AgGa0.8In0.2Se2 crystal was found to be much larger than that of AgGaSe2. The PL study showed that the AgGa0.8In0.2Se2 crystal had advantages over the AgGa0.9In0.1Se2 crystal for their use as potential radiation detectors.

© 2008 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION

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KEYWORDS and PACS

Keywords

binding energy, crystal growth from melt, energy gap, excitons, gallium compounds, impurity states, indium compounds, photoluminescence, semiconductor growth, silver compounds, ternary semiconductors, thermal expansion

PACS

  • 78.55.Hx

    Other solid inorganic materials

  • 81.10.Fq

    Growth from melts; zone melting and refining

  • 71.20.Nr

    Semiconductor compounds

  • 61.50.Lt

    Crystal binding; cohesive energy

  • 71.35.-y

    Excitons and related phenomena

  • 71.55.Ht

    Other nonmetals

  • 65.40.De

    Thermal expansion; thermomechanical effects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2940739

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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