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1 Jun 2008

Volume 103, Issue 11, Articles (11xxxx)

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J. Appl. Phys. 103, 111101 (2008); http://dx.doi.org/10.1063/1.2931951 (18 pages)

A. Redaelli, A. Pirovano, A. Benvenuti, and A. L. Lacaita
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Continuous current and surface potential models for undoped and lightly doped double-gate metal-oxide-semiconductor field-effect transistors

Hamdy Abd Elhamid and M. J. Deen

J. Appl. Phys. 103, 114501 (2008); http://dx.doi.org/10.1063/1.2937177 (12 pages) | Cited 5 times

Online Publication Date: 4 June 2008

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We have introduced a continuous, explicit, surface potential model for symmetric undoped and lightly doped double gate metal-oxide-semiconductor field-effect transistor devices. The surface potential model considered both hole and electron quasi-Fermi potential effects. An explicit current model has been introduced in terms of both source and drain charge densities at which hole and electron quasi-Fermi level or IMREFs are defined. The introduced models are directly related to the device biasing and device structure without the need for fitting parameters. Both of the surface potential and current models are continuous from below to above threshold and from linear to saturation of operation regimes. Good agreement has been obtained when our analytical models are compared to numerical results. The effects of hole IMREF on the small-signal (or ac) parameters are also reported. We predicted that the presence of holes has raised the saturation voltage. Also, we have observed from the gate capacitance curve that the hole IMREF should be taken into our account for low frequency applications.
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85.30.Tv Field effect devices

Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes

Sung Jin Jo, Chang Su Kim, Jong Bok Kim, Seung Yoon Ryu, Joo Hyon Noh, Hong Koo Baik, Youn Sang Kim, and Se-Jong Lee

J. Appl. Phys. 103, 114502 (2008); http://dx.doi.org/10.1063/1.2939261 (4 pages) | Cited 6 times

Online Publication Date: 5 June 2008

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The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. % indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼ 6 at. %. The increase in indium can be explained by an oxygen deficiency in the CF4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.
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85.60.Jb Light-emitting devices
66.30.hk Polymers
81.65.-b Surface treatments

Bandstructure effects in ultra-thin-body double-gate field effect transistor: A fullband analysis

Kausik Majumdar and Navakanta Bhat

J. Appl. Phys. 103, 114503 (2008); http://dx.doi.org/10.1063/1.2937186 (9 pages) | Cited 3 times

Online Publication Date: 5 June 2008

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The properties of an n-channel ultra-thin-body (UTB) double-gate field effect transistor (DGFET), resulting from the bandstructure of the thin film Si channel, are discussed in this paper. The bandstructure has been calculated using a ten-orbital sp3d5s∗ tight-binding method. A number of intrinsic properties including band gap, density of states, intrinsic carrier concentration, and parabolic effective mass have been derived from the calculated bandstructure. The spatial distributions of intrinsic carrier concentration and 〈100〉 effective mass, resulting from the wave functions of different contributing subbands, are analyzed. A self-consistent solution of coupled Poisson-Schrödinger equations is obtained taking the full bandstructure into account, which is then applied to analyze volume inversion. The spatial distribution of carriers over the channel of a DGFET has been calculated and its effect on effective mass and channel capacitance is discussed.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

All-electric detection of the polarization state of terahertz laser radiation

S. D. Ganichev, W. Weber, J. Kiermaier, S. N. Danilov, P. Olbrich, D. Schuh, W. Wegscheider, D. Bougeard, G. Abstreiter, and W. Prettl

J. Appl. Phys. 103, 114504 (2008); http://dx.doi.org/10.1063/1.2937192 (8 pages) | Cited 4 times

Online Publication Date: 6 June 2008

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Two types of room-temperature detectors of terahertz laser radiation have been developed which allow, in an all-electric manner, the determination of the plane of polarization of linearly polarized radiation and the Stokes parameters of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have nanosecond time constants at room temperature, making a high time resolution of the polarization detectors possible.
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42.25.Ja Polarization
29.40.-n Radiation detectors
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.67.De Quantum wells

InAlGaAs/InP light-emitting transistors operating near 1.55 μm

Yong Huang, Xue-Bing Zhang, Jae-Hyun Ryou, Russell D. Dupuis, Forest Dixon, Nick Holonyak, Jr., and Milton Feng

J. Appl. Phys. 103, 114505 (2008); http://dx.doi.org/10.1063/1.2939243 (6 pages) | Cited 5 times

Online Publication Date: 9 June 2008

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Light-emitting transistors (LETs) operating at around 1.55 μm were investigated using InP/InAlGaAs heterostructures grown by metal organic chemical vapor deposition. By incorporating InGaAs quantum wells (QWs) in the base region of the N-InP/p-InAlGaAs/N-InAlAs heterojunction bipolar transistors, LET structures were achieved with a current gain of 45 and light emission at a wavelength of 1.65 μm. The light output was found to be dependent on the base current. The larger the number of QWs incorporated in the base of the LETs, the larger the light output, with correspondingly reduced current gain. Secondary ion mass spectroscopy shows that the p-type dopant, zinc (Zn), which is commonly used in the growth of InAlGaAs, diffuses into the emitter and the base active QW region, leading to compromised electrical performance and light output intensity. Increasing the Zn doping level in the barrier layers of the QW structure causes the photoluminescence efficiency to decrease rapidly. Consequently, an alternative low-diffusivity dopant, carbon (C), was studied and a LET with a C-doped base was grown and fabricated. The highest light output was demonstrated for the C-doped LETs owing to the improved quality of the active layer.
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85.30.Pq Bipolar transistors
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
61.72.U- Doping and impurity implantation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

Tzu-Pin Chen, Wei-Hsin Chen, Chi-Jhung Lee, Kuei-Yi Chu, Li-Yang Chen, Ching-Wen Hung, Tsung-Han Tsai, Shiou-Ying Cheng, and Wen-Chau Liu

J. Appl. Phys. 103, 114506 (2008); http://dx.doi.org/10.1063/1.2936964 (5 pages)

Online Publication Date: 9 June 2008

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The dc and electron impaction ionization characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure are studied and reported. From the experiments, the studied device shows a better common-emitter breakdown voltage and lower output conductance at higher temperature operations. Due to the insertion of a step-graded InAlGaAs collector structure at the base-collector heterojunction, the usually observed switching and hysteresis phenomena in InP/InGaAs-based HBTs are not seen in the studied device. The temperature-dependent electron impact ionization characteristics are also investigated. Above all, the studied DHBT device provides the promise for millimeter-wave and power circuit applications.
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85.30.Pq Bipolar transistors

Phonon-plasmon coupled-mode lifetime in semiconductors

A. Dyson and B. K. Ridley

J. Appl. Phys. 103, 114507 (2008); http://dx.doi.org/10.1063/1.2937918 (4 pages) | Cited 21 times

Online Publication Date: 10 June 2008

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Raman scattering measurements of the lifetime of hot phonons in GaN show a decrease with increasing electron concentration. Density-dependent lifetimes have also been deduced from noise measurements of AlGaN/GaN channels. We suggest that the results from Raman scattering can be understood by the frequency dependence of the anharmonic interaction for coupled modes and that the results from noise measurements can be understood qualitatively by the anharmonic interaction plus the migration of coupled modes.
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63.20.Ry Anharmonic lattice modes
63.20.kk Phonon interactions with other quasiparticles
78.30.Fs III-V and II-VI semiconductors
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Impact of carbon concentration on 1/f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors

J. Raoult, F. Pascal, C. Delseny, M. Marin, and M. J. Deen

J. Appl. Phys. 103, 114508 (2008); http://dx.doi.org/10.1063/1.2939252 (10 pages) | Cited 1 time

Online Publication Date: 10 June 2008

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The influence of carbon concentration on the low-frequency noise (LF noise) of Si/SiGe:C/Si heterojunction bipolar transistors (HBTs) is investigated. When carbon is incorporated into these HBTs, representative noise spectra of the input current spectral density SIB show significant generation-recombination (GR) components. On the other hand, for transistors without carbon incorporation, no GR components were observed. When only 1/f noise component is observed, the 1/f noise level is found to be independent of the carbon concentration and the associated figure of merit of the normalized noise magnitude KB has a very good value of ∼ 4×10−10 μm2. In order to relate the 1/f noise and the high-frequency performance of the transistor, we studied and modeled the figure of merit defined as the ratio fc/fT (fc is the low-frequency corner frequency and fT the unity current-gain frequency). Then we performed a detailed analysis of the GR components associated with the presence of the carbon. We found that the observed Lorentzian spectra are associated with random telegraph signal (RTS) noise. However, no RTS noise was measured in carbon-free devices. It is believed that the RTS noise is due to electrically active defects formed by the addition of carbon, typically observed for concentrations above the bulk solid solubility limit in silicon. The RTS amplitude (ΔIB) is found to scale with the base current, to decrease exponentially with temperature, and to be independent of the carbon concentration. The mean pulse widths (tH,tL) of the RTS are found to decrease rapidly with bias voltage, as 1/exp(qVBE/kT) or stronger. Our results confirm that electrically active C-related defects are located in the base-emitter junction, and the RTS amplitude is explained by a model based on voltage barrier height fluctuations across the base-emitter junction induced by trapped carriers in the space charge region. The observed bias dependence of mean pulse widths seems to indicate that two capture processes are involved, electron and hole capture. These C-related defects behave like recombination centers with deep energy levels rather than electron or hole traps involving trapping-detrapping processes.
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85.30.Pq Bipolar transistors
72.70.+m Noise processes and phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Optimization of amorphous silicon thin film solar cells for flexible photovoltaics

T. Söderström, F.-J. Haug, V. Terrazzoni-Daudrix, and C. Ballif

J. Appl. Phys. 103, 114509 (2008); http://dx.doi.org/10.1063/1.2938839 (8 pages) | Cited 27 times

Online Publication Date: 11 June 2008

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We investigate amorphous silicon (a-Si:H) thin film solar cells in the n-i-p or substrate configuration that allows the use of nontransparent and flexible substrates such as metal or plastic foils such as polyethylene-naphtalate (PEN). A substrate texture is used to scatter the light at each interface, which increases the light trapping in the active layer. In the first part, we investigate the relationship between the substrate morphology and the short circuit current, which can be increased by 20% compared to the case of flat substrate. In the second part, we investigate cell designs that avoid open-circuit voltage (Voc) and fill factor (FF) losses that are often observed on textured substrates. We introduce an amorphous silicon carbide n-layer (n-SiC), a buffer layer at the n/i interface, and show that the new cell design yields high Voc and FF on both flat and textured substrates. Furthermore, we investigate the relation between voids or nanocrack formations in the intrinsic layer and the textured substrate. It reveals that the initial growth of the amorphous layer is affected by the doped layer which itself is influenced by the textured substrate. Finally, the beneficial effect of our optical and electrical findings is used to fabricate a-Si:H solar cell on PEN substrate with an initial efficiency of 8.8% for an i-layer thickness of 270 nm.
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84.60.Jt Photoelectric conversion

Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors

Kangho Lee, Pradeep R. Nair, Muhammad A. Alam, David B. Janes, Heeyeon P. Wampler, Dmitry Y. Zemlyanov, and Albena Ivanisevic

J. Appl. Phys. 103, 114510 (2008); http://dx.doi.org/10.1063/1.2936853 (7 pages) | Cited 3 times

Online Publication Date: 11 June 2008

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GaAs junction-field-effect transistors (JFETs) are utilized to achieve label-free detection of biological interaction between a probe transactivating transcriptional activator (TAT) peptide and the target trans-activation-responsive (TAR) RNA. The TAT peptide is a short sequence derived from the human immunodeficiency virus-type 1 TAT protein. The GaAs JFETs are modified with a mixed adlayer of 1-octadecanethiol (ODT) and TAT peptide, with the ODT passivating the GaAs surface from polar ions in physiological solutions and the TAT peptide providing selective binding sites for TAR RNA. The devices modified with the mixed adlayer exhibit a negative pinch-off voltage (VP) shift, which is attributed to the fixed positive charges from the arginine-rich regions in the TAT peptide. Immersing the modified devices into a TAR RNA solution results in a large positive VP shift (>1 V) and a steeper subthreshold slope ( ∼ 80 mV/decade), whereas “dummy” RNA induced a small positive VP shift ( ∼ 0.3 V) without a significant change in subthreshold slopes ( ∼ 330 mV/decade). The observed modulation of device characteristics is analyzed with analytical modeling and two-dimensional numerical device simulations to investigate the electronic interactions between the GaAs JFETs and biological molecules.
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87.15.K- Molecular interactions; membrane-protein interactions
87.14.ef Peptides
85.30.Tv Field effect devices
85.65.+h Molecular electronic devices
87.14.gn RNA
81.65.Rv Passivation
87.15.Pc Electronic and electrical properties

Evidence of satellite valley position in GaN by photoexcited field emission spectroscopy

O. Yilmazoglu, D. Pavlidis, H. L. Hartnagel, A. Evtukh, V. Litovchenko, and N. Semenenko

J. Appl. Phys. 103, 114511 (2008); http://dx.doi.org/10.1063/1.2937257 (3 pages) | Cited 7 times

Online Publication Date: 12 June 2008

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GaN field emitter rods with nanometer diameter were fabricated by photoelectrochemical etching on a n+-GaN substrate. Their electron field emission properties were investigated under ultraviolet (UV) illumination. The Fowler–Nordheim plots of the emission current show different slopes for nonilluminated and UV illuminated devices. A model based on the electron emission from valleys having different specific electron affinities is proposed to explain the experimental results. In the absence of illumination, the GaN rods are almost fully depleted and emission takes place only from the lower valley. Upon UV illumination and presence of a high electric field at the emitter tip, the upper valley of the conduction band appears to be occupied by electrons generated at the valence band. The energy difference between the lower and upper valleys was determined to be 1.15 eV and is in good agreement with formerly published theoretical and measured values.
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81.05.Ea III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning
82.45.Vp Semiconductor materials in electrochemistry
82.50.Hp Processes caused by visible and UV light
79.70.+q Field emission, ionization, evaporation, and desorption
71.20.Nr Semiconductor compounds

Planar microdischarge device for high-speed infrared thermography: Application of selenium-doped silicon detectors

Yu. A. Astrov, L. M. Portsel, A. N. Lodygin, and V. B. Shuman

J. Appl. Phys. 103, 114512 (2008); http://dx.doi.org/10.1063/1.2937255 (6 pages) | Cited 3 times

Online Publication Date: 12 June 2008

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The authors investigated a possibility to develop a technique for high-speed and high-sensitivity imaging in the infrared range of light. The corresponding study was done by applying a planar microdischarge device that was a semiconductor-gas-discharge image converter. The requirements for developing the semiconductor component of the device were formulated to enhance the high-speed performance of the device. To meet these demands, extrinsic selenium-doped silicon detectors were developed. The doping of the semiconductor with selenium was done by high-temperature diffusion of the element from the vapor phase. To find the optimal conditions for the preparation of detectors, the efficiency of doping silicon with selenium as a function of the selenium vapor pressure was studied. The operation of the microdischarge device where the developed detectors were applied was investigated. This study demonstrates that converters equipped with Se:Se detectors can provide imaging of objects heated to temperature Tmin ∼ 200 °C with a temporal resolution on the order of 10−6 s and a spatial resolution of ∼ 5 lines/mm.
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42.79.Pw Imaging detectors and sensors
61.72.U- Doping and impurity implantation
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Grain-boundary-limited charge transport in solution-processed 6,13 bis(tri-isopropylsilylethynyl) pentacene thin film transistors

Jihua Chen, Chee Keong Tee, Max Shtein, John Anthony, and David C. Martin

J. Appl. Phys. 103, 114513 (2008); http://dx.doi.org/10.1063/1.2936978 (12 pages) | Cited 25 times

Online Publication Date: 12 June 2008

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Grain boundaries play an important role in determining the electrical, mechanical, and optical properties of polycrystalline thin films. A side-disubstituted counterpart of pentacene, 6,13 bis(tri-isopropylsilylethynyl) (TIPS) pentacene, has lateral π-π packing and reasonably high solubility in a number of organic solvents. In this paper, the effects of grain boundaries on the effective hole mobility, on/off ratio, threshold voltage, and hysteresis of transistor transfer characteristics were investigated in solution-processed TIPS pentacene thin film transistors with both experiments and simulations. The effects of solvent type, concentration, substrate temperature, and evaporation rate were investigated by optical, electron, and atomic force microscopies. An apparatus for controlled solution casting was designed, fabricated, and used to make TIPS pentacene thin film transistors with more precisely controlled variations in microstructure and defect densities. First, hysteresis in the electrical characteristics was found to correlate directly with grain width WG (the crystal dimension along [1math0]) in active layers. In addition, since TIPS pentacene crystals with larger grain width (WG>6 μm) generally took a long needle shape and the ones with smaller domain sizes (WG<4 μm) had a more equiaxed geometry, a sharp enhancement in the effective mobility was observed in the larger grains. In devices with active layers cast from toluene solution, the measured field-effect hole mobility for grain width WG smaller than 4 μm was generally ≤ 0.01 cm2/V s, whereas mobility for films with grain width WG>6 μm was typically 0.1 ∼ 1 cm2/V s. A model of boundary-limited transport was developed and used to explain experimental data. Based on the proposed model and an energy barrier (EB) on the order of 100 meV for electrical transport across grain boundary, the effective grain-boundary mobility μGBo was estimated to be approximately 5×10−7 cm2/V s.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

Electron holography analysis of a shallow junction for planar-bulk metal-oxide-semiconductor field-effect transistors approaching the scaling limit

Nobuyuki Ikarashi, Takeshi Ikezawa, Kazuya Uejima, Toshinori Fukai, Makoto Miyamura, Akio Toda, and Masami Hane

J. Appl. Phys. 103, 114514 (2008); http://dx.doi.org/10.1063/1.2937246 (5 pages) | Cited 5 times

Online Publication Date: 13 June 2008

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We investigated electrostatic potential distributions in source∕drain extensions (SDEs) in metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated using state-of-the-art junction formation technology. We first demonstrate that electron holography can directly reveal potential distribution in scaled MOSFETs when specimen preparation artifacts are reduced, which we did by using back side low-energy Ar ion milling. Second, we examine the potential distributions in SDEs in a scaled (30‐nm-gate-length) MOSFET fabricated by using a combination of cluster B implantation, millisecond annealing, and multihalo implantation. The results show that these junction formation technologies enable fabrication of very abrupt and shallow (10‐nm-deep) SDE junctions. In addition, our experimental analysis, in conjunction with a Monte Carlo doping-process simulation, indicates that B channeling along the ⟨110⟩ direction of the Si substrate during the implantation process significantly blurs the SD junction profiles and that multihalo implantation can increase junction abruptness. Third, we show that our experimental results describe well the roll-off characteristics of the MOSFETs.
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85.30.Tv Field effect devices
85.75.Hh Spin polarized field effect transistors
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
61.72.U- Doping and impurity implantation

Three-band quantum well infrared photodetector using interband and intersubband transitions

F. D. P. Alves, J. Amorim, M. Byloos, H. C. Liu, A. Bezinger, M. Buchanan, N. Hanson, and G. Karunasiri

J. Appl. Phys. 103, 114515 (2008); http://dx.doi.org/10.1063/1.2937919 (7 pages) | Cited 6 times

Online Publication Date: 13 June 2008

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This paper presents the design, fabrication, and characterization of a quantum well infrared photodetector capable of detecting near infrared (NIR), midwavelength infrared (MWIR), and long wavelength infrared (LWIR) simultaneously. The NIR detection was achieved using interband transition while MWIR and LWIR were based on intersubband transition in the conduction band. The quantum well structure was modeled by solving self-consistently the Schrödinger and Poisson equations with the help of the shooting method. Intersubband absorption in the sample was measured for the MWIR and LWIR using Fourier transform infrared spectroscopy, and the measured peak positions were found at 5.3 and 8.7 μm, respectively, which are within 5% of the theoretical values, indicating the good accuracy of the self-consistent model. The photodetectors were fabricated using a standard photolithography process with exposed middle contacts to allow separate bias and readout of signals from the three wavelength bands. The background limited infrared performance for the LWIR quantum wells shows an upper operating temperature of about 70 K, limiting the overall device. Photocurrent spectroscopy was performed and gave three peaks at 0.84, 5.0, and 8.5 μm wavelengths with approximately 0.5, 0.03, and 0.13 A/W peak responsivities for NIR, MWIR, and LWIR bands, respectively. These results demonstrate the possibility of detection of widely separated wavelength bands, in a single pixel device, using interband and intersubband transitions in quantum wells.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.15.Eq Optical system design
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

Type II transition in InSb-based nanostructures for midinfrared applications

R. Intartaglia, G. Rainó, V. Tasco, F. Della Sala, R. Cingolani, A. N. Baranov, N. Deguffroy, E. Tournié, B. Satpati, A. Trampert, and M. De Giorgi

J. Appl. Phys. 103, 114516 (2008); http://dx.doi.org/10.1063/1.2938063 (5 pages) | Cited 4 times

Online Publication Date: 13 June 2008

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We present a study of the structural and optical properties of a heterostructure emitting in the midinfrared. The structure consists of monolayerlike InSb quantum wells inserted in an InAs/GaSb superlattice (SL) matrix. X-ray diffraction and transmission electron microscopy analyses show a high structural quality of the structure. A strong emission line with a peak energy near 0.30 eV (3.5 μm) is observed from the monolayerlike InSb. In order to identify the physical origin of this transition, excitation density and temperature dependent photoluminescence experiments have been performed on samples with different nominal InSb thicknesses and SL designs. The experimental results suggest a type II band alignment, with electrons localized in the conduction miniband of the InAs/GaSb SL matrix and holes localized in the monolayerlike InSb. This assignment is supported by the shift of InSb layer emission to lower energies when the SL design is changed, and by tight-binding calculations.
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68.55.J- Morphology of films
68.65.Fg Quantum wells
61.66.Fn Inorganic compounds
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
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