Optimization of amorphous silicon thin film solar cells for flexible photovoltaics

Söderström, T.; Haug, F.-J.; Terrazzoni-Daudrix, V.; Ballif, C.

doi:doi:10.1063/1.2938839

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We investigate amorphous silicon (a-Si:H) thin film solar cells in the n-i-p or substrate configuration that allows the use of nontransparent and flexible substrates such as metal or plastic foils such as polyethylene-naphtalate (PEN). A substrate texture is used to scatter the light at each interface, which increases the light trapping in the active layer. In the first part, we investigate the relationship between the substrate morphology and the short circuit current, which can be increased by 20% compared to the case of flat substrate. In the second part, we investigate cell designs that avoid open-circuit voltage (V_oc) and fill factor (FF) losses that are often observed on textured substrates. We introduce an amorphous silicon carbide n-layer (n-SiC), a buffer layer at the n/i interface, and show that the new cell design yields high V_oc and FF on both flat and textured substrates. Furthermore, we investigate the relation between voids or nanocrack formations in the intrinsic layer and the textured substrate. It reveals that the initial growth of the amorphous layer is affected by the doped layer which itself is influenced by the textured substrate. Finally, the beneficial effect of our optical and electrical findings is used to fabricate a-Si:H solar cell on PEN substrate with an initial efficiency of 8.8% for an i-layer thickness of 270 nm.

Article Outline

INTRODUCTION
EXPERIMENTAL
RESULTS
1. Substrates
2. n layer
3. Interface treatment
4. Buffer layer at n/i interface
5. Amorphous solar cell
DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

amorphous semiconductors, cracks, doping, elemental semiconductors, hydrogen, semiconductor thin films, silicon, solar cells, voids (solid)

PACS

84.60.Jt

Photoelectric conversion

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.2938839

PUBLICATION DATA

ISSN

0021-8979 (print)

1089-7550 (online)

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American Institute of Physics

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