Growth of m-plane GaN quantum wires and quantum dots on m-plane 6H-SiC

Amstatt, B.; Renard, J.; Bougerol, C.; Bellet-Amalric, E.; Gayral, B.; Daudin, B.

doi:doi:10.1063/1.2786050

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Magnetic memory of oil paintings

The color in oil paints is obtained sometimes from magnetic minerals. This fact implies that oil paintings could present an intrinsic magnetization. Magnetic imaging of an oil painting consists in the measurement of magnetic flux related to the magnetization of the painting. In this report results of magnetic measurements show that oil paints from different manufacturers (Maimeri, Pebeo, and Grumbacher) are magnetic. The magnetic imagings of four similar oil paintings done with the same visual ...

Molecular dynamics simulation study of the ejection and transport of polymer molecules in matrix-assisted pulsed laser evaporation

The physical mechanisms and molecular-level picture of laser-induced material ejection from frozen solutions of polymer molecules in a volatile matrix are investigated in a series of coarse-grained molecular dynamics simulations. The simulations are performed for polymer concentrations up to 6 wt % and laser fluences covering the range from the regime where molecular ejection is limited to matrix evaporation from the surface up to more than twice the threshold fluence for the onset of the colle...

Growth of m-plane GaN quantum nanostructures on an AlN buffer layer on m-plane SiC is investigated. GaN nanostructures with different shapes are obtained depending on the AlN buffer layer thickness and the amount of GaN deposited. For AlN buffer layer below 300 nm, GaN quantum wires, elongated perpendicularly to the c axis, are obtained independently of the amount of GaN deposited. For buffer layer thickness above 300 nm, and for an amount of GaN below (above) 5 ML (monolayer), GaN quantum dots (wires) are obtained. The difference in m-plane GaN morphology is related to the buffer layer stress state and to the anisotropic surface diffusion of m-plane GaN. Optical properties suggest an absence of internal quantum confined Stark effect.

Article Outline

INTRODUCTION
RESULTS
1. Growth conditions
2. AFM measurements
3. RHEED results
4. X-ray diffraction measurements
5. Transmission electron microscopy studies
6. Optical studies
DISCUSSION AND CONCLUSION

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KEYWORDS and PACS

Keywords

buffer layers, gallium compounds, nanostructured materials, semiconductor quantum dots, semiconductor quantum wires, silicon compounds, Stark effect, surface diffusion, surface morphology

PACS

68.65.La

Quantum wires (patterned in quantum wells)
68.65.Hb

Quantum dots (patterned in quantum wells)
68.35.Fx

Diffusion; interface formation
68.35.B-

Structure of clean surfaces (and surface reconstruction)

ARTICLE DATA

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http://dx.doi.org/10.1063/1.2786050

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0021-8979 (print)

1089-7550 (online)

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American Institute of Physics

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