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Journal of Applied Physics / Volume 101 / Issue 9 / PROCEEDINGS OF THE TENTH JOINT MMM/INTERMAG CONFERENCE / Oxide Magnetic Semiconductors

J. Appl. Phys. 101, 09H121 (2007); http://dx.doi.org/10.1063/1.2714192 (3 pages)

Large positive magnetoresistance effect below Curie temperature in In1.90−xMn0.1SnxO3

X. L. Wang1, G. Peleckis1, S. X. Dou1, R. S. Liu2, and J. G. Zhu3

1Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, New South Wales 2522, Australia
2Department of Chemistry, National Taiwan University, Roosevelt Road, Sec. 4, Taipei, 10617 Taiwan
3Faculty of Engineering, University of Technology, Sydney, New South Wales 2007, Australia

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(Received 29 October 2006; accepted 23 January 2007; published online 11 May 2007)

We report on the magnetoresistance (MR) and magnetic properties of In1.90−xMn0.1SnxO3 (0 ⩽ x ⩽ 0.06) oxide. All samples were found to be ferromagnetic below TC = 46 K. Sn doping changed In1.90Mn0.1O3 from an insulator to a highly conducting phase at 300 K. A positive MR effect was observed over a wide temperature range just below TC. Calculated MR values reached a maximum of 20% at 5 K. A change in the MR effect, from positive to negative, occurred under magnetic field H>4 T at 5 K. The results of x-ray absorption near-edge spectroscopy indicated that Mn ions are present both as Mn2+ and Mn4+.

© 2007 American Institute of Physics

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KEYWORDS and PACS

Keywords

tin, indium compounds, Curie temperature, doping, XANES, giant magnetoresistance, ferromagnetic materials, coercive force, electrical conductivity

PACS

  • 75.47.De

    Giant magnetoresistance

  • 75.50.Dd

    Nonmetallic ferromagnetic materials

  • 75.30.Kz

    Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

  • 75.60.Ej

    Magnetization curves, hysteresis, Barkhausen and related effects

  • 72.20.My

    Galvanomagnetic and other magnetotransport effects

  • 78.70.Dm

    X-ray absorption spectra

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2714192

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    S. B. Ogale et al., Phys. Rev. Lett. 91, 077205 (2003).

    J. Philip, N. Theodoropoulou, G. Berera, and J. S. Moodera, Appl. Phys. Lett. 85, 777 (2004)APPLAB000085000005000777000001.

    Y. K. Yoo et al., Appl. Phys. Lett. 86, 042506 (2005)APPLAB000086000004042506000001.

    N. H. Hong, J. Sakai, N. T. Huong, and V. Brizé, Appl. Phys. Lett. 87, 102505 (2005)APPLAB000087000010102505000001.

    A. Fouchet, W. Prellier, P. Padhan, Ch. Simon, B. Mercey, V. N. Kulkarni, and T. Venkatesan, J. Appl. Phys. 95, 7187 (2004)JAPIAU000095000011007187000001.


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