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15 Mar 2007

Volume 101, Issue 6, Articles (06xxxx)

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Submicron patterning of a catalyst film by scanning probe nanolithography for a selective chemical vapor deposition of carbon nanotubes

P. Parisse, A. Verna, M. Rinaldi, F. Bussolotti, V. Grossi, M. Passacantando, M. Nardone, S. Santucci, and L. Ottaviano

J. Appl. Phys. 101, 066101 (2007); http://dx.doi.org/10.1063/1.2711144 (3 pages) | Cited 2 times

Online Publication Date: 20 March 2007

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Submicrometric catalyst patterns have been fabricated by atomic force nanolithography and the subsequent selective growth of carbon nanotubes has been successfully verified. Rectangular stripes ( ∼ 350 nm wide) were engraved onto a polymethylmethacrylate film, deposited onto SiO2/Si, by polymer removal with atomic force microscopy nanoindentation. Metallic catalyst patterns were subsequently obtained after 3 nm Ni deposition and lift-off of the residual polymer. Multiwalled carbon nanotubes were then grown by thermal chemical vapor deposition onto the Ni stripes. The various steps of nanopatterning and of carbon nanotubes growth are also studied by scanning electron microscopy and Raman measurements.
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81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation
81.07.De Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.Fg Nanotubes
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Prediction of B–Sii–F complex formation and its role in B transient enhanced diffusion suppression and deactivation

Scott A. Harrison, Thomas F. Edgar, and Gyeong S. Hwang

J. Appl. Phys. 101, 066102 (2007); http://dx.doi.org/10.1063/1.2710432 (3 pages)

Online Publication Date: 21 March 2007

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Gradient corrected density functional calculations are used to examine the interaction of boron and fluorine in crystalline silicon. We have determined the formation of a stable boron-silicon-fluorine (Bs–Sii–Fi) complex in which the B and F atoms are indirectly connected through a Si interstitial, while the direct B–F bonding interaction is likely to be insignificant. Depending on dissociation reactions, the binding energy of the Bs–Sii–Fi complex is predicted to be 1.82–1.91 eV relative to the corresponding products in the neutral state. We also show the atomic structure and bonding mechanism of Bs–Sii–Fi and discuss the potential role of Bs–Sii–Fi formation in B transient enhanced diffusion suppression and deactivation.
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66.30.J- Diffusion of impurities
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.J- Point defects and defect clusters

Giant third-order nonlinearity of lead and germanium based films in the visible and in the infrared

Cid B. de Araújo, A. Humeau, G. Boudebs, Vanessa D. Del Cacho, and Luciana R. P. Kassab

J. Appl. Phys. 101, 066103 (2007); http://dx.doi.org/10.1063/1.2713944 (3 pages) | Cited 9 times

Online Publication Date: 27 March 2007

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The nonlinearity of lead and germanium based films with thickness of 1.5 μm was studied using a mode-locked picosecond Nd:YAG laser at 1064 nm and its second harmonic at 532 nm. Nonlinear refractive indices of ≈ 10−16 m2/W and two-photon absorption coefficients varying from ≈ 102 cm/GW at 1064 nm to  ≈ 103 cm/GW at 532 nm were measured. The results show that the films have potential applications in optical limiting devices.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.79.Wc Optical coatings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Relaxorlike dielectric behavior in Ba0.7Sr0.3TiO3 thin films

Ricardo J. Zednik, Paul C. McIntyre, John D. Baniecki, Masatoshi Ishii, Takeshi Shioga, and Kazuaki Kurihara

J. Appl. Phys. 101, 066104 (2007); http://dx.doi.org/10.1063/1.2511367 (3 pages)

Online Publication Date: 28 March 2007

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We present the results of a systematic dielectric study for sputter deposited barium strontium titanate thin film planar capacitors measured over a wide temperature range of 20–575 K for frequencies between 1 kHz and 1 MHz. Our observations of dielectric loss peaks in the temperature and frequency domains cannot be understood in the typical framework of intrinsic phonon losses. We find that the accepted phenomenological Curie–von Schweidler dielectric behavior (universal relaxation law) in our barium strontium titanate films is only applicable over a narrow temperature range. An excellent fit to the Vogel-Fulcher expression suggests relaxorlike behavior in these films. The activation energy of the observed phenomenon suggests that oxygen ion motion play a role in the apparent relaxor behavior, although further experimental work is required to test this hypothesis.
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77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors

Acoustic leakage in electromagnetic waveguides made from piezoelectric materials

Jiashi Yang, A.-K. Soh, and Xiaohong Chen

J. Appl. Phys. 101, 066105 (2007); http://dx.doi.org/10.1063/1.2712157 (3 pages)

Online Publication Date: 29 March 2007

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Show Abstract
We study the propagation of coupled acoustic and electromagnetic waves in a piezoelectric plate waveguide embedded in two half-spaces of another dielectric material. It is shown that certain waves are guided electromagnetically but not so acoustically and that these waves are effectively damped waves with acoustic leakage of energy. An estimate of the acoustic radiation damping is given.
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42.79.Gn Optical waveguides and couplers
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

A first-principles investigation on the mechanism of nitrogen dissolution in the Na flux method

M. Kawahara, F. Kawamura, M. Yoshimura, Y. Mori, T. Sasaki, S. Yanagisawa, and Y. Morikawa

J. Appl. Phys. 101, 066106 (2007); http://dx.doi.org/10.1063/1.2713945 (3 pages)

Online Publication Date: 29 March 2007

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The origin of the drastic enhancement of the N solubility in Na-rich GaxNa1−x liquid alloys compared to pure Ga and Ga-rich alloys is clarified using density functional theory. Liquid simulations show that Ga atoms tend to aggregate in Ga-rich alloys, while Ga atoms are isolated or form small clusters in Na-rich alloys. The calculated N solubility for model crystals shows good agreement with the experimental results. In Ga-rich alloys, the interaction between Ga and N is weak because Ga interacts strongly with surrounding Ga atoms. In Na-rich alloys, Ga–N bond becomes strong because Ga is chemically active, leading to the enhancement of the N solubility.
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64.75.-g Phase equilibria
61.25.Mv Liquid metals and alloys
81.10.Dn Growth from solutions

Thermal-neutron scintillator: Ce3+ activated Rb2LiYBr6

M. D. Birowosuto, P. Dorenbos, J. T. M. de Haas, C. W. E. van Eijk, K. W. Krämer, and H. U. Güdel

J. Appl. Phys. 101, 066107 (2007); http://dx.doi.org/10.1063/1.2713948 (3 pages) | Cited 4 times

Online Publication Date: 30 March 2007

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Scintillation and luminescence characteristics of Rb2LiYBr6 doped with 0.1%, 0.5%, 1%, and 5% Ce3+ are presented. Under optical and x-ray excitation, Ce3+ doublet emission is observed at 385 and 420 nm. Rb2LiYBr6:0.5% Ce3+ shows very high thermal neutron scintillation light output of 83 000 photons/neutron. An excellent neutron peak resolution of 3.6% (full width at half maximum over peak position) is observed for the 4.8 MeV neutron-reaction products energy response in Rb2LiYBr6:0.1% Ce3+. This peak shows up at 3.6 MeV γ-equivalent energy and therefore it gives an α/β ratio of 0.74. The combination of a large fraction of neutron absorption in natural 6Li (62%), a sharp neutron response peak, high light yield, and large α/β ratio makes Rb2LiYBr6:Ce3+ an efficient scintillator for thermal neutron detection.
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29.40.Mc Scintillation detectors
78.55.Hx Other solid inorganic materials
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