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Journal of Applied Physics / Volume 100 / Issue 4 / COMMUNICATIONS

J. Appl. Phys. 100, 046101 (2006); http://dx.doi.org/10.1063/1.2260658 (3 pages)

Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes

D. Y. Li, Y. Z. Huang, J. J. Zhu, D. G. Zhao, Z. S. Liu, S. M. Zhang, X. J. Ye, M. Chong, L. H. Chen, H. Yang, and J. W. Liang

State Key Laboratory of Integrated Optoelectronics and Nano-optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

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(Received 14 September 2005; accepted 2 July 2006; published online 23 August 2006)

Time-resolved light-current curves, spectra, and far-field distributions of ridge structure InGaN multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. Results show that the thermal lensing effect clearly improves the confinement of the higher order modes. The thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. The threshold current for the higher modes decreases by about 5 mA in every 10 ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase.

© 2006 American Institute of Physics

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KEYWORDS and PACS

Keywords

thermal lensing, quantum well lasers, indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, laser modes, time resolved spectra

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2260658

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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