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15 Nov 2006

Volume 100, Issue 10, Articles (10xxxx)

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Energy exchange during stimulated Raman scattering of a relativistic laser in a plasma

D. N. Gupta, M. S. Hur, and H. Suk

J. Appl. Phys. 100, 103101 (2006); http://dx.doi.org/10.1063/1.2384808 (5 pages) | Cited 6 times

Online Publication Date: 20 November 2006

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Energy exchange between pump and daughter waves during the stimulated Raman scattering process in a plasma is investigated, including the effect of a damping coefficient of electron-ion collision at different initial three-wave phases. To obey the energy and momentum conservations, the resonance conditions are satisfied at an optimal initial phase difference between the interacting waves. The amplitudes of the interacting waves exhibit behaviors such as a parametric oscillator. The variations in initial three-wave phase difference generate a phase mismatch, which enhances the rate of the amplitude variations of the interacting waves. The relativistic mass effect modifies the dispersion relations of the interacting waves, and consequently the energy exchange during the stimulated Raman scattering is affected. The collisional damping in the plasma is shown to have an important effect on the evolution of the interacting waves.
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52.38.Bv Rayleigh scattering; stimulated Brillouin and Raman scattering
52.20.Fs Electron collisions
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)
52.27.Ny Relativistic plasmas

Thermoelectrical model for vertical cavity surface emitting lasers and arrays

D. L. Boiko, G. Guerrero, and E. Kapon

J. Appl. Phys. 100, 103102 (2006); http://dx.doi.org/10.1063/1.2386941 (9 pages) | Cited 2 times

Online Publication Date: 20 November 2006

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An analytical model of thermal and electrical characteristics of vertical cavity surface emitting lasers (VCSELs) and VCSEL arrays is presented. The model is based on analytical expressions for the thermal resistance and for the I-V curve of the devices and incorporates only a few macroscopic parameters. It accounts for three-dimensional current and heat flows and provides thermo-electrical self-consistency. Good agreement between the model’s predictions and the measured characteristics of InGaAs/AlGaAs VCSEL arrays is obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Integratable 40 dB optical waveguide isolators using a resonant-layer effect with mode coupling

Jacob M. Hammer, Gokhan Ozgur, Gary A. Evans, and Jerome K. Butler

J. Appl. Phys. 100, 103103 (2006); http://dx.doi.org/10.1063/1.2388040 (6 pages) | Cited 1 time

Online Publication Date: 28 November 2006

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Resonant-layer effect (RLE) optical isolators can be integrated with a wide variety of optical waveguide devices and systems and theoretically provide a high degree of isolation with low insertion loss. The effect of mode coupling within the isolator and the losses due to coupling between the isolator and the input and output waveguides on the performance of RLE isolators is calculated. The results predict that isolators integrated with semiconductor waveguides similar to those used for efficient lasers and amplifiers and isolators integrated with quartzlike waveguides can give 40 dB of isolation with insertion losses below 3 dB. The calculations also show relaxed dimensional tolerance and lengths in the 1–2 mm range, which makes commercial production of such isolators attractive.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers

Detection and identification of illicit drugs using terahertz imaging

Meihong Lu, Jingling Shen, Ning Li, Yan Zhang, Cunlin Zhang, Laishun Liang, and Xiaoyu Xu

J. Appl. Phys. 100, 103104 (2006); http://dx.doi.org/10.1063/1.2388041 (5 pages) | Cited 24 times

Online Publication Date: 30 November 2006

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We demonstrated an advanced terahertz imaging technique for detection and identification of illicit drugs by introducing the component spatial pattern analysis. As an explanation, the characteristic fingerprint spectra and refractive index of ketamine were first measured with terahertz time-domain spectroscopy both in the air and nitrogen. The results obtained in the ambient air indicated that some absorption peaks are not obvious or probably not dependable. It is necessary and important to present a more practical technique for the detection. The spatial distributions of several illicit drugs [3,4-methylenedioxymethamphetamine, methylenedioxyamphetamine, heroin, acetylcodeine, morphine, and ketamine], widely consumed in the world, were obtained from terahertz images using absorption spectra previously measured in the range from 0.2 to 2.6 THz in the ambient air. The different kinds of pure illicit drugs hidden in mail envelopes were inspected and identified. It could be an effective method in the field of safety inspection.
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07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Design, growth, fabrication, and characterization of InAs/GaAs 1.3 μm quantum dot broadband superluminescent light emitting diode

S. K. Ray, K. M. Groom, R. Alexander, K. Kennedy, H. Y. Liu, M. Hopkinson, and R. A. Hogg

J. Appl. Phys. 100, 103105 (2006); http://dx.doi.org/10.1063/1.2365387 (6 pages) | Cited 7 times

Online Publication Date: 30 November 2006

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In this paper we discuss a technique for broadening the emission and gain spectra of 1.3 μm quantum dot superluminescent light emitting diodes (SLEDs). By incorporating different amounts of indium in different wells of a multi-dot-in-well stack we are able to tailor the emission and gain spectra of the devices. This technique allows us to overlap the ground state of one dot-in-well (DWELL) with the excited state of another to achieve broader and flatter emission spectra compared to a SLED design comprising DWELL layers of constant indium composition. Due to the low internal loss of these structures, this broadening is achieved without a significant reduction in the output power of the devices.
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85.60.Jb Light-emitting devices

Three-dimensional simulation of laser-produced plasma for extreme ultraviolet lithography applications

V. Sizyuk, A. Hassanein, and T. Sizyuk

J. Appl. Phys. 100, 103106 (2006); http://dx.doi.org/10.1063/1.2365717 (7 pages) | Cited 18 times

Online Publication Date: 30 November 2006

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Laser-produced plasma (LPP) from a tin target is being considered as the light source for the next generation of extreme ultraviolet (EUV) lithography. An integrated model was developed to simulate the plasma behavior and the EUV radiation output in LPP devices. The model includes plasma heat conduction and hydrodynamic processes in a two-temperature approximation, as well as detailed photon radiation transport using Monte Carlo methods. Multiple laser beams incident on a single target have been simulated in full three-dimensional geometry, using the total variation-diminishing scheme for the plasma hydrodynamics and an implicit scheme for heat conduction processes. Numerical simulations showed that EUV conversion efficiency increases for multiple-beam devices with specific optimum laser locations and direction compared to a single-beam device.
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52.75.-d Plasma devices
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.25.Fi Transport properties
52.65.Pp Monte Carlo methods
85.40.Hp Lithography, masks and pattern transfer
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