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Journal of Applied Physics / Volume 99 / Issue 8 / PROCEEDINGS OF THE 50TH ANNUAL CONFERENCE ON MAGNETISM AND MAGNETIC MATERIALS / Magnetic Memory and Elements

J. Appl. Phys. 99, 08N906 (2006); http://dx.doi.org/10.1063/1.2173231 (3 pages)

Analysis of 60 nm diam spin dependent tunneling memory cells with thermally assisted writing

A. V. Pohm, J. M. Daughton, and J. G. Deak

NVE Corp., 11409 Valley View Road, Eden Prairie, Minnesota 55344

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(Published online 5 May 2006)

An analysis has been performed for spin dependent tunneling memory cells with a 5 nm thick pinned, storage magnetic layer with a 60 nm diam and with a saturation magnetization of 1000 emu/cm3. In reading, the required pinning fields plus anisotropy fields for the cases of with and without error correction were found to be 79 and 108 Oe. The required total fields for writing for the cases with and without error correction were calculated to be 93 and 129 Oe. The write current needed to provide the total, effective, 129 Oe write field was calculated to be 1.1 mA for the assumed word line structure. The needed heating current through the tunnel cell was calculated to be 41 μA assuming a tunnel junction and an added resistive layer. A multiple sample read mode with an autozero step and a word read field requires word read currents of 2.50 and 2.75 mA. The multisample, autozero mode has wider margins. If the semiconductor selection matrix can be placed underneath the cells, the calculated cell is 0.022 μm2.

© 2006 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. ANALYSIS
    1. Reading requirements
    2. Writing requirements
    3. Sensing and fabrication challenges
  3. SUMMARY

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KEYWORDS and PACS

Keywords

magnetic tunnelling, magnetic anisotropy, error correction, magnetic storage

PACS

  • 85.75.Dd

    Magnetic memory using magnetic tunnel junctions

  • 85.70.Li

    Other magnetic recording and storage devices (including tapes, disks, and drums)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2173231

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    T. Sato, M. Tsunoda, and M. Takahashi, J. Appl. Phys. 95, 7513 (2004)JAPIAU000095000011007513000001.

    J. P. Nozieres, S. Jaren, Y. B. Zhang, A. Zelster, K. Pentek, and V. S. Speriosu, J. Appl. Phys. 87, 3920 (2000)JAPIAU000087000008003920000001.


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