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Journal of Applied Physics / Volume 91 / Issue 10 / MAGNETOELECTRONIC DEVICES

J. Appl. Phys. 91, 8405 (2002); http://dx.doi.org/10.1063/1.1447203 (3 pages)

Prototype spin-dependent tunneling isolators integrated with integrated circuit electronics

Dexin Wang, Mark Tondra, Cathy Nordman, Zhenghong Qian, James M. Daughton, Erik Lange, David Brownell, Loc Tran, and James Schuetz

NVE Corporation, 11409 Valley View Road, Eden Prairie, Minnesota 55344

Low power, fast speed, small size, wide temperature range, and common-mode-noise-rejection capability are some of the attributes of magnetoresistive devices for galvanic isolation over conventional devices such as optical and capacitive devices. We have fabricated prototype galvanic isolators using spin-dependent tunneling materials. The tunnel junctions have been deposited by rf diode sputtering and the Al2O3 barriers are formed by depositing a thin layer of Al, then oxidizing it with oxygen contained plasma. The junctions are then patterned using photolithography techniques to define the pinned and free layers separately. A series of tunnel junctions are connected in a Wheatstone bridge form and are fabricated directly on top of the integrated circuit (IC) electronics that are used to process the signals from the bridge. In its core magnetics design, this digital device simply employs a one-bit memory cell capable of operating at 5 V. The functions of the devices are tested using a function generator, an IC driver chip, a probe station, two dc power supplies, and a high-speed network analyzer. The power consumption for the isolator is <1 mW when operating at 2 MHz, a factor of 10 lower than the giant magnetoresistance product of similar functions. The operating speed of this device reaches 60 MHz, limited by the design of the electronics. © 2002 American Institute of Physics.

© 2002 American Institute of Physics

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KEYWORDS and PACS

Keywords

opto-isolators, integrated optoelectronics, magnetoresistive devices, electron spin polarisation, low-power electronics, tunnelling, magneto-optical isolators, sputter deposition, photolithography, power consumption, alumina, aluminium

PACS

  • 85.75.-d

    Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

  • 72.25.Mk

    Spin transport through interfaces

  • 73.40.Gk

    Tunneling

  • 85.70.Sq

    Magnetooptical devices

  • 85.40.-e

    Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1447203

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    J. M. Daughton, J. Appl. Phys. 81, 3758 (1997)JAPIAU000081000008003758000001.

    D. Wang, M. Tondra, A. V. Pohm, C. Nordman, J. Anderson, J. M. Daughton, and W. C. Black, J. Appl. Phys. 87, 6385 (2000)JAPIAU000087000009006385000001.

    M. Tondra, J. M. Daughton, D. Wang, R. Beech, A. Fink, and J. Taylor, J. Appl. Phys. 83, 6688 (1998)JAPIAU000083000011006688000001.

    S. Cardoso, P. P. Freitas, C. de Jesus, and J. C. Soares, J. Appl. Phys. 87, 6058 (2000)JAPIAU000087000009006058000001.

    T. Sato, Y. Miura, S. Matsumura, and K. Yamasawa, J. Appl. Phys. 83, 6658 (1998)JAPIAU000083000011006658000001.

    D. Wang, M. Tondra, J. M. Daughton, C. Nordman, and A. Pohm, J. Appl. Phys. 85, 5255 (1999)JAPIAU000085000008005255000001.


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