• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

J. Appl. Phys. 90, 3314 (2001); http://dx.doi.org/10.1063/1.1399028 (5 pages)

Sharp-line luminescence and absorption in ZnGeP2

C. I. Rablau and N. C. Giles

Department of Physics, West Virginia University, Morgantown, West Virginia 26506-6315

(Received 14 June 2001; accepted 10 July 2001)

Photoluminescence and optical absorption spectroscopies have been used to study bulk ZnGeP2. Two sharp zero-phonon lines with opposite polarizations are resolved in emission at 1.7849 eV (at 70 K) and 1.7784 eV (at 5 K), respectively. Thermalization occurs between these two lines, suggesting a split excited state of the center. Considerable structural detail is resolved in the vibronic sidebands of these lines, revealing phonon energies of 6.3±0.1 meV and 43.7±0.1 meV. Similar phonon energies are resolved in low-temperature absorption spectra. These results for ZnGeP2 are explained by a model of radiative recombination of excitons bound to an isoelectronic defect center. The observed polarization behavior of the sharp-line spectra can be produced by the built-in tetragonal distortion along the c axis associated with the chalcopyrite structure. © 2001 American Institute of Physics.

© 2001 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

PACS

ARTICLE DATA

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

For access to fully linked references, you need to log in.

    References

    N. P. Barnes, in Tunable Lasers Handbook, edited by F. J. Duarte (Academic, New York, 1995), Chap. 7, pp. 293–348.

    S. D. Setzler, P. G. Schunemann, T. M. Pollak, M. C. Ohmer, J. T. Goldstein, F. K. Hopkins, K. T. Stevens, L. E. Halliburton, and N. C. Giles, J. Appl. Phys. 86, 6677 (1999)JAPIAU000086000012006677000001.

    J. E. McCrae, Jr., M. R. Gregg, R. L. Hengehold, Y. K. Yeo, P. H. Ostdiek, M. C. Ohmer, P. G. Schunemann, and T. M. Pollak, Appl. Phys. Lett. 64, 3142 (1994)APPLAB000064000023003142000001.

    H. M. Hobgood, T. Henningsen, R. N. Thomas, R. H. Hopkins, M. C. Ohmer, W. C. Mitchel, D. W. Fischer, S. M. Hegde, and F. K. Hopkins, J. Appl. Phys. 73, 4030 (1993)JAPIAU000073000008004030000001.

    N. Dietz, I. Tsveybak, W. Ruderman, G. Wood, and K. J. Bachmann, Appl. Phys. Lett. 65, 2759 (1994)APPLAB000065000022002759000001.

    M. Moldovan and N. C. Giles, J. Appl. Phys. 87, 7310 (2000)JAPIAU000087000010007310000001.

    T. N. Morgan, B. Welber, and R. N. Bhargava, Phys. Rev. 166, 751 (1968).

    C. H. Henry, P. J. Dean, and J. D. Cuthbert, Phys. Rev. 166, 754 (1968).

    D. G. Thomas and J. J. Hopfield, Phys. Rev. 150, 680 (1966).

    F. A. Trumbore, M. Gershenzon, and D. G. Thomas, Appl. Phys. Lett. 9, 4 (1966)APPLAB000009000001000004000001.

    J. D. Cuthbert and D. J. Thomas, J. Appl. Phys. 39, 1573 (1968)JAPIAU000039000003001573000001.

    J. L. Mertz, Phys. Rev. 176, 961 (1968).

    J. van W. Morgan and T. N. Morgan, Phys. Rev. B 1, 739 (1970).

    Sho Shirakata, J. Appl. Phys. 85, 3294 (1999)JAPIAU000085000006003294000001.


For access to citing articles, you need to log in.



Close
Google Calendar
ADVERTISEMENT

close