Microwave circuit model of the three-port transistor laser

Then, H. W.; Feng, M.; Holonyak, N.

doi:doi:10.1063/1.3371802

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Charge sensitive infrared phototransistor for 45 μm wavelength

The detection wavelength of charge-sensitive infrared phototransistors (CSIPs), originally developed for 15 μm wavelength radiation, is expanded to longer wavelengths of ∼ 45 μm. The CSIPs are fabricated on GaAs/AlGaAs crystals with bilayer two-dimensional electron gas. Photoresponse at targeted wavelengths is confirmed. Low quantum efficiency of photoresponse, on the order of 10−4, has been ascribed to electron traps (Al–O complex) contained in an AlGaAs barrier layer. Several possible approa...

Probing triplet-triplet annihilation zone and determining triplet exciton diffusion length by using delayed electroluminescence

The literature shows that triplet-triplet annihilation (TTA) can provide a substantial contribution to the electroluminescence (EL) of fluorescent organic light-emitting devices (OLEDs). In this study, we utilized delayed EL measurements to probe the TTA emission zone of archetypical 8-hydroxyquinoline aluminum (Alq3) based OLEDs. The results demonstrate that the TTA emission zone of these devices is much larger than the prompt emission zone of singlet states that are formed in the electron-hol...

Based on an earlier charge control analysis, we have constructed a microwave circuit model of a three-port quantum-well (QW) transistor laser (TL) by extending Kirchhoff’s law to include electron-photon interaction, to yield an electrical-optical form of Kirchhoff’s law. The TL circuit model includes both intrinsic device elements and extrinsic parasitic elements, and fits accurately measured microwave S-parameters upto 20 GHz and matches also measured eye-diagram data up to 13 Gb/s (equipment-limited). The TL model yields both electrical and optical device parameters as well as physical quantities such as QW charge density, n_QW ∼ 10¹⁶ cm⁻³, which is useful in the analysis of the device physics of TL operation. The low density indicates that the base QW charge level is not as important as the current driving the QW and supplying electron-hole recombination, and implies that the quasi-Fermi level is discontinuous in the TL base. The model is used to simulate a directly modulated TL up to 40 Gb/s, for example, a TL employed in an optical communication link.

Article Outline

INTRODUCTION
THEORY AND MODEL
DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

equivalent circuits, microwave circuits, optical communication equipment, quantum well lasers, semiconductor device models

PACS

42.55.Px

Semiconductor lasers; laser diodes
84.40.Dc

Microwave circuits
42.79.Sz

Optical communication systems, multiplexers, and demultiplexers

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http://dx.doi.org/10.1063/1.3371802

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0021-8979 (print)

1089-7550 (online)

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American Institute of Physics

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