jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Journal of Applied Physics / Volume 107 / Issue 8 / ARTICLES / Electronic Structure and Transport

J. Appl. Phys. 107, 083713 (2010); http://dx.doi.org/10.1063/1.3354105 (5 pages)

Anisotropy of the electrical transport properties in a Ni2MnGa single crystal: Experiment and theory

Min Zeng1, Meng-Qiu Cai2, Siu Wing Or3, and Helen Lai Wa Chan1

1Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
2State Key Laboratory of Optoelectronic Materials and TechnologiesZhongshan University, Guangzhou 510275, Guangdong, People’s Republic of China
3Department of Electrical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong

View MapView Map

(Received 2 February 2010; accepted 3 February 2010; published online 29 April 2010)

Electrical transport properties in ferromagnetic shape memory Ni–Mn–Ga single crystal have been investigated both in experiment and theory by analyzing electrical resistivity along different crystallographic directions during heating. The experimental results show a clear first-order martensitic transformation and a large anisotropic resistivity (AR) of 23.7% at the tetragonal martensitic phase. The theoretical conductivity (σ = 1/ρ), estimated using first-principles calculations combined with classical Boltzman transport theory, proves essential crystallographic anisotropic resistivity (AR = 31%) in the martensitic phase and agrees well with experimental results. The AR in the martensitic phase is reveled to mainly originate from the splitting of the minority-spin Ni 3d and Ga 4p states near the Fermi level and hence reconstruction of the minority-spin Fermi surface upon martensitic transformation.

© 2010 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. DETAILS OF EXPERIMENTAL AND THEORETICAL CALCULATION
  3. RESULTS AND DISCUSSION
  4. CONCLUSIONS

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

ab initio calculations, electrical conductivity, electrical resistivity, Fermi level, Fermi surface, ferromagnetic materials, gallium alloys, heat treatment, manganese alloys, martensitic transformations, nickel alloys, shape memory effects

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3354105

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    A. Sozinov, A. A. Likhachev, N. Lanska, and K. Ullako, Appl. Phys. Lett. 80, 1746 (2002)APPLAB000080000010001746000001.

    N. Sarawate and M. Dapino, Appl. Phys. Lett. 88, 121923 (2006)APPLAB000088000012121923000001.

    K. Ullakko, J. K. Huang, C. Kantner, R. C. O'Handley, and V. V. Kokorin, Appl. Phys. Lett. 69, 1966 (1996)APPLAB000069000013001966000001.

    H. D. Chopra, C. Ji, and V. V. Kokorin, Phys. Rev. B 61, R14913 (2000).

    S. J. Murray, M. A. Marioni, A. M. Kukla, J. Robinson, R. C. O'Handley, and S. M. Allen, J. Appl. Phys. 87, 5774 (2000)JAPIAU000087000009005774000001.

    S. J. Murray, M. Marioni, S. M. Allen, and R. C. O'Handley, Appl. Phys. Lett. 77, 886 (2000)APPLAB000077000006000886000001.

    C. Biswas, R. Rawat, and S. R. Barman, Appl. Phys. Lett. 86, 202508 (2005)APPLAB000086000020202508000001.

    V. O. Golub, A. Ya. Vovk, L. Malkinski, C. J. O'Connor, Z. Wang, and J. Tang, J. Appl. Phys. 96, 3865 (2004)JAPIAU000096000007003865000001.

    J. Marcos, A. Planes, L. Manosa, A. Labarta, and B. J. Hattink, Phys. Rev. B 66, 054428 (2002).

    M. Q. Cai, Y. J. Zhang, Z. Yin, and M. S. Zhang, Phys. Rev. B 72, 075406 (2005).

    J. Enkovaara, A. Ayuela, L. Nordstrom, and R. M. Nieminen, Phys. Rev. B 65, 134422 (2002).

    R. Gómez Abal, A. M. Llois, and M. Weissmann, Phys. Rev. B 53, R8844 (1996).

    T. J. Scheidemantel, C. Ambrosch-Draxl, T. Thonhauser, J. V. Badding, and J. O. Sofo, Phys. Rev. B 68, 125210 (2003).

    V. V. Godlevsky and K. M. Rabe, Phys. Rev. B 63, 134407 (2001).

    S. R. Barman, S. Banik, and A. Chakrabarti, Phys. Rev. B 72 184410 (2005).

    C. Bungaro, K. M. Rabe, and A. D. Corso, Phys. Rev. B 68, 134104 (2003).

    Z. Y. Zhu, H. W. Zhang, S. F. Xu, J. L. Chen, Z. X. Cao, and G. H. Wu, J. Appl. Phys. 103, 093704 (2008)JAPIAU000103000009093704000001 (Code available from http://www.xcrysden.org).

    C. P. Opeil, B. Mihaila, R. K. Schulze, L. Mañosa, A. Planes, W. L. Hults, R. A. Fisher, P. S. Riseborough, P. B. Littlewood, J. L. Smith, and J. C. Lashley, Phys. Rev. Lett. 100, 165703 (2008).

    V. N. Antonov, A. Ya. Perlov, P. M. Oppeneer, A. N. Yaresko, and S. V. Halilov, Phys. Rev. Lett. 77, 5253 (1996).


For access to citing articles, you need to log in.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Anisotropy of the electrical transport properties in a Ni2MnGa single crystal: Experiment and theory
  2. Theoretical and experimental investigation of optically driven nanoelectromechanical oscillators
  3. Accurate control of ion bombardment in remote plasmas using pulse-shaped biasing
  4. Plasma parameters of pulsed-dc discharges in methane used to deposit diamondlike carbon films
  5. Resonance frequencies of cavities in three-dimensional electromagnetic band gap structures
Go to AIP Home
Copyright © American Institute of Physics
close