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Journal of Applied Physics / Volume 107 / Issue 4 / ARTICLES / Nanoscale Science and Design

J. Appl. Phys. 107, 044310 (2010); http://dx.doi.org/10.1063/1.3309018 (7 pages)

Large-scale graphitic thin films synthesized on Ni and transferred to insulators: Structural and electronic properties

Helin Cao1,2, Qingkai Yu3, Robert Colby2,4, Deepak Pandey1,2, C. S. Park5, Jie Lian6, Dmitry Zemlyanov2, Isaac Childres1,2, Vladimir Drachev2,7, Eric A. Stach2,4, Muhammad Hussain5, Hao Li8, Steven S. Pei3, and Yong P. Chen1,2,7

1Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA
2Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
3Center of Advanced Materials and Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204, USA
4School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA
5SEMATECH, 2706 Montopolis Dr., Austin, Texas 78741, USA
6Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
7School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
8Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211, USA

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(Received 6 December 2009; accepted 7 January 2010; published online 23 February 2010)

We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm’s have been synthesized. Structural characterizations by atomic force microscopy, scanning tunneling microscopy, cross-sectional transmission electron microscopy (XTEM), and Raman spectroscopy confirm that such large-scale graphitic thin films (GTF) contain both thick graphite regions and thin regions of few-layer graphene. The films also contain many wrinkles, with sharply-bent tips and dislocations revealed by XTEM, yielding insights on the growth and buckling processes of the GTF. Measurements on mm-scale back-gated transistor devices fabricated from the transferred GTF show ambipolar field effect with resistance modulation ∼ 50% and carrier mobilities reaching ∼ 2000 cm2/V s. We also demonstrate quantum transport of carriers with phase coherence length over 0.2 μm from the observation of two-dimensional weak localization in low temperature magnetotransport measurements. Our results show that despite the nonuniformity and surface roughness, such large-scale, flexible thin films can have electronic properties promising for device applications.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

atomic force microscopy, buckling, carrier mobility, CVD coatings, dislocations, field effect transistors, flexible electronics, galvanomagnetic effects, graphene, graphite, Raman spectra, scanning tunnelling microscopy, surface roughness, surface segregation, transmission electron microscopy, weak localisation

PACS

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

  • 61.48.Gh

    Structure of graphene

  • 78.67.Wj

    Optical properties of graphene

  • 78.30.Na

    Fullerenes and related materials

  • 61.72.Ff

    Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

  • 73.22.Pr

    Electronic structure of graphene

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3309018

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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