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Journal of Applied Physics / Volume 106 / Issue 3 / INTERDISCIPLINARY AND GENERAL PHYSICS

J. Appl. Phys. 106, 034910 (2009); http://dx.doi.org/10.1063/1.3182826 (11 pages)

Thermal conductivity of cubic and hexagonal mesoporous silica thin films

Thomas Coquil1, Erik K. Richman2, Neal J. Hutchinson1, Sarah H. Tolbert2, and Laurent Pilon1

1Mechanical and Aerospace Engineering Department, Henry Samueli School of Engineering and Applied Sciences, University of California, Los Angeles, 420 Westwood Plaza, Los Angeles, California 90095, USA
2Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive East, P.O. Box 951569, Los Angeles, California 90095-1569, USA

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(Received 26 March 2009; accepted 24 May 2009; published online 10 August 2009)

This paper reports the cross-plane thermal conductivity of highly ordered cubic and hexagonal templated mesoporous amorphous silica thin films synthesized by evaporation-induced self-assembly process. Cubic and hexagonal films featured spherical and cylindrical pores and average porosities of 25% and 45%, respectively. The pore diameters ranged from 3 to 18 nm and film thickness from 80 to 540 nm, while the average wall thickness varied from 3 to 12 nm. The thermal conductivity was measured at room temperature using the 3ω method. The experimental setup and the associated analysis were validated by comparing the thermal conductivity measurements with the data reported in literature for the silicon substrate and for high quality thermal oxide thin films with thicknesses ranging from 100 to 500 nm. The cross-plane thermal conductivity of the synthesized mesoporous silica thin films does not show strong dependence on pore size, wall thickness, or film thickness. This is due to the fact that heat is mainly carried by very localized nonpropagating vibrational modes. The average thermal conductivity for the cubic mesoporous silica films was 0.30±0.02 W/m K, while it was 0.20±0.01 W/m K for the hexagonal films. This corresponds to reductions of 79% and 86% from bulk fused silica at room temperature.

© 2009 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. CURRENT STATE OF KNOWLEDGE
  3. METHOD AND EXPERIMENTS
    1. Sample film preparation
    2. Film characterization
    3. Principles of the 3ω method
    4. Experimental apparatus
    5. Experimental procedure
    6. Validation
  4. RESULTS AND DISCUSSION
    1. Effect of film thickness
    2. Effect of porosity
    3. Effects of pore diameter and wall thickness
  5. CONCLUSION

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KEYWORDS and PACS

Keywords

amorphous state, localised modes, low-k dielectric thin films, mesoporous materials, porosity, self-assembly, silicon compounds, thermal conductivity, vacuum deposition

PACS

  • 66.70.Lm

    Other systems such as ionic crystals, molecular crystals, nanotubes, etc.

  • 63.50.Lm

    Glasses and amorphous solids

  • 61.43.Gt

    Powders, porous materials

  • 77.55.-g

    Dielectric thin films

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3182826

PUBLICATION DATA

ISSN

0021-8979 (print)  
1089-7550 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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