• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

J. Appl. Phys. 106, 033302 (2009); doi:10.1063/1.3183945 (11 pages)

Plasma parameters of pulsed-dc discharges in methane used to deposit diamondlike carbon films

C. Corbella, M. Rubio-Roy, E. Bertran, and J. L. Andújar

FEMAN Group, IN2UB, Departament de Física Aplicada i Òptica, Universitat de Barcelona, c/Martí i Franquès 1, E-08028 Barcelona, Spain

View MapView Map

(Received 4 February 2009; accepted 24 June 2009; published online 5 August 2009)

Here we approximate the plasma kinetics responsible for diamondlike carbon (DLC) depositions that result from pulsed-dc discharges. The DLC films were deposited at room temperature by plasma-enhanced chemical vapor deposition (PECVD) in a methane (CH4) atmosphere at 10 Pa. We compared the plasma characteristics of asymmetric bipolar pulsed-dc discharges at 100 kHz to those produced by a radio frequency (rf) source. The electrical discharges were monitored by a computer-controlled Langmuir probe operating in time-resolved mode. The acquisition system provided the intensity-voltage (I-V) characteristics with a time resolution of 1 μs. This facilitated the discussion of the variation in plasma parameters within a pulse cycle as a function of the pulse waveform and the peak voltage. The electron distribution was clearly divided into high- and low-energy Maxwellian populations of electrons (a bi-Maxwellian population) at the beginning of the negative voltage region of the pulse. We ascribe this to intense stochastic heating due to the rapid advancing of the sheath edge. The hot population had an electron temperature Tehot of over 10 eV and an initial low density nehot which decreased to zero. Cold electrons of temperature Tecold ∼ 1 eV represented the majority of each discharge. The density of cold electrons necold showed a monotonic increase over time within the negative pulse, peaking at almost 7×1010 cm−3, corresponding to the cooling of the hot electrons. The plasma potential Vp of ∼ 30 V underwent a smooth increase during the pulse and fell at the end of the negative region. Different rates of CH4 conversion were calculated from the DLC deposition rate. These were explained in terms of the specific activation energy Ea and the conversion factor xdep associated with the plasma processes. The work deepens our understanding of the advantages of using pulsed power supplies for the PECVD of hard metallic and protective coatings for industrial applications (optics, biomedicine, and electronics).

© 2009 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENTAL SETUP
    1. Reactor description and operating conditions
    2. Data acquisition
  3. RESULTS AND DISCUSSION
    1. Analysis of the I-V characteristics
      1. Modeling
      2. Calculation of the plasma parameters
    2. rf discharges monitored by a Langmuir probe
      1. I-V characteristics
      2. Plasma parameters
    3. Bipolar pulsed-dc discharges monitored by a fast Langmuir probe
      1. Time-resolved recording of I-V characteristics
      2. Tracking plasma parameters
        1. Electron temperature
        2. Plasma density
        3. Plasma and floating potentials
      3. Averaged parameters
    4. Input power and deposition rate
      1. Growth regimes
      2. Power dissipation modes
  4. CONCLUSIONS

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

PACS

  • 52.77.Dq

    Plasma-based ion implantation and deposition

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 73.50.Fq

    High-field and nonlinear effects

  • 52.80.-s

    Electric discharges

  • 52.70.Ds

    Electric and magnetic measurements

  • 68.55.aj

    Insulators

PUBLICATION DATA

ISSN:

0021-8979 (print)  
1089-7550 (online)

For access to fully linked references, you need to log in.
    S. Aisenberg and R. Chabot, J. Appl. Phys. 42, 2953 (1971)JAPIAU000042000007002953000001.

    C. Corbella, B. Echebarría, L. Ramírez-Piscina, E. Pascual, J. L. Andújar, and E. Bertran, Appl. Phys. Lett. 87, 213117 (2005)APPLAB000087000021213117000001.

    M. Bauer, T. Schwarz-Selinger, W. Jacob, and A. von Keudell, J. Appl. Phys. 98, 073302 (2005)JAPIAU000098000007073302000001.

    D. Gahan, B. Dolinaj, and M. B. Hopkins, Rev. Sci. Instrum. 79, 033502 (2008)RSINAK000079000003033502000001.

    V. I. Demidov, S. V. Ratynskaia, and K. Rypdal, Rev. Sci. Instrum. 73, 3409 (2002)RSINAK000073000010003409000001.

    A. Joshi, S. A. Gangal, and S. K. Kulkarni, J. Appl. Phys. 64, 6668 (1988)JAPIAU000064000012006668000001.

    S. Peter, K. Graupner, D. Grambole, and F. Richter, J. Appl. Phys. 102, 053304 (2007)JAPIAU000102000005053304000001.

    F. F. Chen, Phys. Plasmas 8, 3029 (2001)PHPAEN000008000006003029000001.

    H. Toyoda, H. Kojima, and H. Sugai, Appl. Phys. Lett. 54, 1507 (1989)APPLAB000054000016001507000001.

    Z. Sternovsky, S. Robertson, and M. Lampe, Phys. Plasmas 10, 300 (2003)PHPAEN000010000001000300000001.

    V. A. Godyak, R. B. Piejak, and B. M. Alexandrovich, J. Appl. Phys. 73, 3657 (1993)JAPIAU000073000008003657000001.

    S. J. You, S. K. Ahn, and H. Y. Chang, Appl. Phys. Lett. 89, 171502 (2006)APPLAB000089000017171502000001.

    C. Beneking, J. Appl. Phys. 68, 4461 (1990)JAPIAU000068000009004461000001.

    S. J. You, H. C. Kim, C. W. Chung, H. Y. Chang, and J. K. Lee, J. Appl. Phys. 94, 7422 (2003)JAPIAU000094000012007422000001.


For access to citing articles, you need to log in.


Figures (12) Tables (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close
Google Calendar
ADVERTISEMENT

close