jap banner
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Journal of Applied Physics / Volume 104 / Issue 8 / ELECTRONIC STRUCTURE AND TRANSPORT

J. Appl. Phys. 104, 083712 (2008); doi:10.1063/1.3000051 (8 pages)

Ionization and shielding of interface states in native p+-Si/SiO2 probed by electric field induced second harmonic generation

T. Scheidt1, E. G. Rohwer1, P. Neethling1, H. M. von Bergmann1, and H. Stafast2

1Laser Research Institute, Physics Department, University of Stellenbosch, Private Bag X1, Matieland 7602, South Africa
2Institut für Photonische Technologien (IPHT), POB 100239, D-07702 Jena, Germany

View MapView Map

(Received 28 April 2008; accepted 25 August 2008; published online 28 October 2008)

Electric field induced second harmonic measurements applying femtosecond laser pulses (1.59 eV, 80±5 fs, 80 MHz) to substantially boron doped p+-Si/SiO2 interfaces reveal a temporal evolution of the second harmonic (SH) signal, which differs drastically from that of weakly doped samples. A significant initial SH signal is observed in native p+-Si/SiO2 interfaces for boron doping concentrations >7.5×1017 cm−3. This SH signal is attributed to a built-in interfacial electric field E0 generated by the doping induced accumulation of charges at the Si/SiO2 interface following the ionization of interface defect states. A sign reversal is observed in the azimuthal SH anisotropy pattern of the initial SH signal relative to that of the saturated SH signal in p+-Si/SiO2 indicating that the doping related and electron induced interfacial field components oppose each other. Furthermore, the intensity dependence of the initial SH signal in p+-Si/SiO2 is found to be nonquadratic and, in particular, shows a nonmonotonic behavior at incident intensities above ∼ 60 GW/cm2. These observations are attributed to ultrafast screening of E0 caused by linearly as well as nonlinearly photoexcited electron-hole pairs.

© 2008 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS
  4. DISCUSSION
    1. Doping induced built-in electric field
    2. Temporal SH evolution in p+-Si/SiO2
    3. Rotational SH anisotropy
    4. Photoinduced charge carrier screening
  5. SUMMARY

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

defect states, doping, interface states, optical harmonic generation, silicon, silicon compounds, surface ionisation

PACS

  • 73.20.Hb

    Impurity and defect levels; energy states of adsorbed species

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

  • 42.65.Ky

    Frequency conversion; harmonic generation, including higher-order harmonic generation

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.3000051

PUBLICATION DATA

ISSN:

0021-8979 (print)  
1089-7550 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    P. S. Winokur, H. E. Boesch, Jr., J. M. McGarrity, and F. B. McLean, J. Appl. Phys. 50, 3492 (1979)JAPIAU000050000005003492000001.

    B. J. O'Sullivan, P. K. Hurley, C. Leveugle, and J. H. Das, J. Appl. Phys. 89, 3811 (2001)JAPIAU000089000007003811000001.

    A. Stesmans, Appl. Phys. Lett. 68, 2076 (1996)APPLAB000068000015002076000001.

    K. Dev and E. G. Seebauer, Phys. Rev. B 67, 035312 (2003).

    I. M. Vitomirov, G. D. Waddill, C. M. Aldao, S. G. Anderson, C. Capasso, and J. H. Weaver, Phys. Rev. B 40, 3483 (1989).

    K. Dev, M. Y. L. Jung, R. Gunawan, R. D. Braatz, and E. G. Seebauer, Phys. Rev. B 68, 195311 (2003).

    D. Lim, M. C. Downer, and J. G. Ekerdt, Appl. Phys. Lett. 77, 181 (2000)APPLAB000077000002000181000001.

    J. Bloch, J. G. Mihaychuk, and H. M. van Driel, Phys. Rev. Lett. 77, 920 (1996).

    J. G. Mihaychuk, N. Shamir, and H. M. van Driel, Phys. Rev. B 59, 2164 (1999).

    J. Fang and G. P. Li, Appl. Phys. Lett. 75, 3506 (1999)APPLAB000075000022003506000001.

    Yu. D. Glinka, W. Wang, S. K. Singh, Z. Marka, S. N. Rashkeev, Y. Shirokaya, R. Albridge, S. T. Pantelides, N. H. Tolk, and G. Lucovsky, Phys. Rev. B 65, 193103 (2002).

    V. Fomenko and E. Borguet, Phys. Rev. B 68, 081301(R) (2003).

    T. Scheidt, E. G. Rohwer, H. M. von Bergmann, and H. Stafast, Phys. Rev. B 69, 165314 (2004).

    J. I. Dadap, X. F. Hu, M. H. Anderson, M. C. Downer, J. K. Lowell, and O. A. Aktsipetrov, Phys. Rev. B 53, R7607 (1996).

    M. McEllistrem, G. Haase, D. Chen, and R. J. Hamers, Phys. Rev. Lett. 70, 2471 (1993).

    M. Y. L. Jung, R. Gunawan, R. D. Braatz, and E. G. Seebauer, J. Appl. Phys. 95, 1134 (2004)JAPIAU000095000003001134000001.

    Y. Qiang An and S. T. Cundiff, Appl. Phys. Lett. 81, 5174 (2002)APPLAB000081000027005174000001.

    Y. Q. An and S. T. Cundiff, Phys. Rev. B 67, 193302 (2003).

    W. Daum, H. -J. Krause, U. Reichel, and H. Ibach, Phys. Rev. Lett. 71, 1234 (1993).

    P. Godefroy, W. de Jong, C. W. van Hasselt, M. A. C. Devillers, and Th. Rasing, Appl. Phys. Lett. 68, 1981 (1996)APPLAB000068000014001981000001.

    M. Murayama and T. Nakayama, Phys. Rev. B 49, 5737 (1994).

    V. Fomenko, J. -F. Lami, and E. Borguet, Phys. Rev. B 63, 121316(R) (2001).


For access to citing articles, you need to log in.


Figures (8)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Ionization and shielding of interface states in native p+-Si/SiO2 probed by electric field induced second harmonic generation
  2. Cobalt ferrite nanoparticles: Achieving the superparamagnetic limit by chemical reduction
  3. Initial studies on microelectromechanical system flux concentrators
  4. Analysis of 60 nm diam spin dependent tunneling memory cells with thermally assisted writing
  5. Prototype spin-dependent tunneling isolators integrated with integrated circuit electronics
Go to AIP Home
Copyright © American Institute of Physics
close