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Journal of Applied Physics / Volume 100 / Issue 2 / LASERS, OPTICS, AND OPTOELECTRONICS

J. Appl. Phys. 100, 023118 (2006); doi:10.1063/1.2216873 (6 pages)

Ultraviolet pulse laser induced modifications of native silicon/silica interfaces analyzed by optical second harmonic generation

T. Scheidt1, E. G. Rohwer1, H. M. von Bergmann1, and H. Stafast2

1Laser Research Institute, Physics Department, University of Stellenbosch, Private Bag X1, Matieland 7602, South Africa
2Institut für Physikalische Hochtechnologie (IPHT), P.O. Box 100239, 07702 Jena, Germany

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(Received 10 November 2005; accepted 18 May 2006; published online 27 July 2006)

Native silicon/silica (Si/SiO2) interfaces are investigated by electric field induced second harmonic (EFISH) generation employing near infrared femtosecond laser pulses (782.8 nm, 80 fs, 10 nJ, 80 MHz repetition rate). Here, the temporal EFISH evolution induced by the femtosecond laser irradiation is recorded with a time resolution of 0.2 s. Comparative EFISH studies are performed with Si/SiO2 interfaces, preexposed to ultraviolet (UV) laser pulses (308 nm, 16 ns, 0.45–2.8 J/cm2) as well as virgin Si/SiO2. After UV irradiation the femtosecond laser induced electron injection and trapping in the ultrathin oxide is found to be drastically accelerated in contrast to the essentially unaffected interfacial hole dynamics. This result is explained by an enhanced interfacial electron trap density caused in most cases by the UV laser induced melting and recrystallization of the near-interface silicon. Furthermore, three-dimensional second harmonic imaging reveals a saturation effect of the UV induced sample modification due to the melting of the near-interface silicon, for which a threshold fluence of 0.47 J/cm2 is extracted for xenon chloride (XeCl) laser irradiation. Below this threshold an accumulative behavior of the UV induced modification is observed for repeated exposure to several UV laser pulses. This is pointing to a dose dependent modification process presumably due to thermally driven interface chemistry and/or microscopic structural and electronic changes of the Si/SiO2 interface.

© 2006 American Institute of Physics

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
    1. Sample preparation
    2. Pulsed UV laser irradiation
    3. Second harmonic measurements
  3. RESULTS
    1. Time dependent SH response of UV laser preirradiated Si/SiO2
    2. SH imaging of UV laser preirradiated sample areas
  4. DISCUSSION
    1. Time dependent EFISH measurements in UV laser preirradiated Si/SiO2
    2. SH imaging of UV laser preirradiated sample areas
  5. SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

silicon, silicon compounds, optical harmonic generation, high-speed optical techniques, laser beams, ultraviolet radiation effects, elemental semiconductors

PACS

  • 78.47.-p

    Spectroscopy of solid state dynamics

  • 61.80.Ba

    Ultraviolet, visible, and infrared radiation effects (including laser radiation)

  • 42.65.Ky

    Frequency conversion; harmonic generation, including higher-order harmonic generation

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.2216873

PUBLICATION DATA

ISSN:

0021-8979 (print)  
1089-7550 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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