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Top 20 Most Read Articles
March 2009
The 20 articles with the most full-text downloads during the month, in descending order.
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Temperature rise induced by a cw laser beam revisited J. Appl. Phys. 57, 5123 (1985); http://dx.doi.org/10.1063/1.335245 (4 pages)
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The problem of spatial distribution of the temperature rise due to a cw laser beam focused on the surface of an absorbing material is reexamined. The effect of temperature dependence of the absorption and reflection coefficients is incorporated in the calculations in a self‐consistent way. A Green’s function has been developed for the heat diffusion equation in the axially symmetric case and a general steady‐state solution is obtained for an arbitrary source function. Compared with previous results, our calculations predict melting at lower laser power densities and changes in the spatial temperature distribution. In the limit of large absorption constants these differences are small. However, they become increasingly significant as the absorption constant is decreased. |
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A comprehensive review of ZnO materials and devices J. Appl. Phys. 98, 041301 (2005); http://dx.doi.org/10.1063/1.1992666 (103 pages) Online Publication Date: 30 August 2005
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The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by
Bunn [Proc. Phys. Soc. London 47, 836 (1935)
], studies of its vibrational properties with Raman scattering in 1966 by
Damen et al. [Phys. Rev. 142, 570 (1966)
], detailed optical studies in 1954 by
Mollwo [Z. Angew. Phys. 6, 257 (1954)
], and its growth by chemical-vapor transport in 1970 by
Galli and Coker [Appl. Phys. Lett. 16, 439 (1970)
]. In terms of devices, Au Schottky barriers in 1965 by
Mead [Phys. Lett. 18, 218 (1965)
], demonstration of light-emitting diodes (1967) by
Drapak [Semiconductors 2, 624 (1968)
], in which Cu2O was used as the p-type material, metal-insulator-semiconductor structures (1974) by
Minami et al. [Jpn. J. Appl. Phys. 13, 1475 (1974)
], ZnO/ZnSe n-p junctions (1975) by
Tsurkan et al. [Semiconductors 6, 1183 (1975)
], and Al/Au Ohmic contacts by
Brillson [J. Vac. Sci. Technol. 15, 1378 (1978)
] were attained. The main obstacle to the development of ZnO has been the lack of reproducible and low-resistivity p-type ZnO, as recently discussed by
Look and Claflin [Phys. Status Solidi B 241, 624 (2004)
]. While ZnO already has many industrial applications owing to its piezoelectric properties and band gap in the near ultraviolet, its applications to optoelectronic devices has not yet materialized due chiefly to the lack of p-type epitaxial layers. Very high quality what used to be called whiskers and platelets, the nomenclature for which gave way to nanostructures of late, have been prepared early on and used to deduce much of the principal properties of this material, particularly in terms of optical processes. The suggestion of attainment of p-type conductivity in the last few years has rekindled the long-time, albeit dormant, fervor of exploiting this material for optoelectronic applications. The attraction can simply be attributed to the large exciton binding energy of 60 meV of ZnO potentially paving the way for efficient room-temperature exciton-based emitters, and sharp transitions facilitating very low threshold semiconductor lasers. The field is also fueled by theoretical predictions and perhaps experimental confirmation of ferromagnetism at room temperature for potential spintronics applications. This review gives an in-depth discussion of the mechanical, chemical, electrical, and optical properties of ZnO in addition to the technological issues such as growth, defects, p-type doping, band-gap engineering, devices, and nanostructures.
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Ultrafast optics: Imaging and manipulating biological systems J. Appl. Phys. 105, 051101 (2009); http://dx.doi.org/10.1063/1.3081635 (17 pages) Online Publication Date: 3 March 2009
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The rapid evolution of ultrafast optics technology over the past two decades has opened the window to a broad range of applications in biology and medicine. Compact, reliable, and turn-key ultrafast laser systems are enabling cutting-edge science to take place in everyday laboratories and clinics. Led by the discovery of two-photon excitation fluorescence microscopy nearly 20 years ago, the biological imaging community is exploring unique image contrast mechanisms and pushing spatial and temporal resolution to new limits. Concurrent with advancements in imaging are developments in the precision application of extremely high peak intensities available in ultrashort pulses for disrupting or manipulating targeted locations in biological systems on the submicron scale while leaving surrounding tissue healthy. The ability for scientists to selectively discriminate structures of interest at the cellular and subcellular levels under relevant physiological conditions shows tremendous promise for accelerating the path to understanding biological functions at the most fundamental level.
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Multiferroic magnetoelectric composites: Historical perspective, status, and future directions J. Appl. Phys. 103, 031101 (2008); http://dx.doi.org/10.1063/1.2836410 (35 pages) Online Publication Date: 5 February 2008
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Multiferroic magnetoelectric materials, which simultaneously exhibit ferroelectricity and ferromagnetism, have recently stimulated a sharply increasing number of research activities for their scientific interest and significant technological promise in the novel multifunctional devices. Natural multiferroic single-phase compounds are rare, and their magnetoelectric responses are either relatively weak or occurs at temperatures too low for practical applications. In contrast, multiferroic composites, which incorporate both ferroelectric and ferri-/ferromagnetic phases, typically yield giant magnetoelectric coupling response above room temperature, which makes them ready for technological applications. This review of mostly recent activities begins with a brief summary of the historical perspective of the multiferroic magnetoelectric composites since its appearance in 1972. In such composites the magnetoelectric effect is generated as a product property of a magnetostrictive and a piezoelectric substance. An electric polarization is induced by a weak ac magnetic field oscillating in the presence of a dc bias field, and/or a magnetization polarization appears upon applying an electric field. So far, three kinds of bulk magnetoelectric composites have been investigated in experimental and theoretical, i.e., composites of (a) ferrite and piezoelectric ceramics (e.g., lead zirconate titanate), (b) magnetic metals/alloys (e.g., Terfenol-D and Metglas) and piezoelectric ceramics, and (c) Terfenol-D and piezoelectric ceramics and polymer. The elastic coupling interaction between the magnetostrictive phase and piezoelectric phase leads to giant magnetoelectric response of these magnetoelectric composites. For example, a Metglas/lead zirconate titanate fiber laminate has been found to exhibit the highest magnetoelectric coefficient, and in the vicinity of resonance, its magnetoelectric voltage coefficient as high as 102 V/cm Oe orders has been achieved, which exceeds the magnetoelectric response of single-phase compounds by many orders of magnitude. Of interest, motivated by on-chip integration in microelectronic devices, nanostructured composites of ferroelectric and magnetic oxides have recently been deposited in a film-on substrate geometry. The coupling interaction between nanosized ferroelectric and magnetic oxides is also responsible for the magnetoelectric effect in the nanostructures as was the case in those bulk composites. The availability of high-quality nanostructured composites makes it easier to tailor their properties through epitaxial strain, atomic-level engineering of chemistry, and interfacial coupling. In this review, we discuss these bulk and nanostructured magnetoelectric composites both in experimental and theoretical. From application viewpoint, microwave devices, sensors, transducers, and heterogeneous read/write devices are among the suggested technical implementations of the magnetoelectric composites. The review concludes with an outlook on the exciting future possibilities and scientific challenges in the field of multiferroic magnetoelectric composites.
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Surface plasmon enhanced silicon solar cells J. Appl. Phys. 101, 093105 (2007); http://dx.doi.org/10.1063/1.2734885 (8 pages) Online Publication Date: 7 May 2007
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Thin-film solar cells have the potential to significantly decrease the cost of photovoltaics. Light trapping is particularly critical in such thin-film crystalline silicon solar cells in order to increase light absorption and hence cell efficiency. In this article we investigate the suitability of localized surface plasmons on silver nanoparticles for enhancing the absorbance of silicon solar cells. We find that surface plasmons can increase the spectral response of thin-film cells over almost the entire solar spectrum. At wavelengths close to the band gap of Si we observe a significant enhancement of the absorption for both thin-film and wafer-based structures. We report a sevenfold enhancement for wafer-based cells at λ = 1200 nm and up to 16-fold enhancement at λ = 1050 nm for 1.25 μm thin silicon-on-insulator (SOI) cells, and compare the results with a theoretical dipole-waveguide model. We also report a close to 12-fold enhancement in the electroluminescence from ultrathin SOI light-emitting diodes and investigate the effect of varying the particle size on that enhancement.
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Band parameters for III–V compound semiconductors and their alloys J. Appl. Phys. 89, 5815 (2001); http://dx.doi.org/10.1063/1.1368156 (61 pages)
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We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. © 2001 American Institute of Physics. |
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Small molecular weight organic thin-film photodetectors and solar cells J. Appl. Phys. 93, 3693 (2003); http://dx.doi.org/10.1063/1.1534621 (31 pages) Online Publication Date: 21 March 2003
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In this review, we discuss the physics underlying the operation of single and multiple heterojunction, vacuum-deposited organic solar cells based on small molecular weight thin films. For single heterojunction cells, we find that the need for direct contact between the deposited electrode and the active organics leads to quenching of excitons. An improved device architecture, the double heterojunction, is shown to confine excitons within the active layers, allowing substantially higher internal efficiencies to be achieved. A full optical and electrical analysis of the double heterostructure architecture leads to optimal cell design as a function of the optical properties and exciton diffusion lengths of the photoactive materials. Combining the double heterostructure with novel light trapping schemes, devices with external efficiencies approaching their internal efficiency are obtained. When applied to an organic photovoltaic cell with a power conversion efficiency of 1.0%±0.1% under 1 sun AM1.5 illumination, devices with external power conversion efficiencies of 2.4%±0.3% are reported. In addition, we show that by using materials with extended exciton diffusion lengths LD, highly efficient double heterojunction photovoltaic cells are obtained, even in the absence of a light trapping geometry. Using C60 as an acceptor material, double heterostructure external power conversion efficiencies of 3.6%±0.4% under 1 sun AM1.5 illumination are obtained. Stacking of single heterojunction devices leads to thin film multiple heterojunction photovoltaic and photodetector structures. Thin bilayer photovoltaic cells can be stacked with ultrathin (∼5 Å), discontinuous Ag layers between adjacent cells serving as efficient recombination sites for electrons and holes generated in the neighboring cells. Such stacked cells have open circuit voltages that are n times the open circuit voltage of a single cell, where n is the number of cells in the stack. In optimized structures, the short circuit photocurrent remains approximately constant upon stacking thin cells, leading to higher achievable power conversion efficiencies, as confirmed by modelling optical interference effects and exciton migration. A 2.5%±0.3% power efficiency under 100 mW/cm2 AM1.5 illumination conditions is obtained by stacking two ∼1% efficient devices. Alternatively, when the contact layers between the stacked cells are eliminated, a multilayer structure consisting of alternating films of donor and acceptor-type materials is obtained. Since the thicknesses of the individual layers (∼5 Å) can be substantially smaller than the exciton diffusion length, nearly 100% of the photogenerated excitons are dissociated, and the resulting free charges are detected. In addition, the ultrathin organic layers facilitate electron and hole transport through the multilayer stack by tunneling. When these devices are operated as photodetectors under applied fields >106 V/cm, the carrier collection efficiency reaches 80%, leading to external quantum efficiencies of 75%±1% across the visible spectrum in cells containing the thinnest layers. We find that due to the fast carrier tunneling process, the temporal response of these multilayer detectors is a direct measure of exciton dynamics. Response times of 720±50 ps are achieved, leading to a 3 dB bandwidth of 430±30 MHz. A summary of representative results obtained for both polymer and small molecule photovoltaic cells and photodetectors is included in this review. Prospects for further improvements in organic solar cells and photodetectors are considered. © 2003 American Institute of Physics. |
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High-κ gate dielectrics: Current status and materials properties considerations J. Appl. Phys. 89, 5243 (2001); http://dx.doi.org/10.1063/1.1361065 (33 pages)
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Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward successful integration into the expected processing conditions for future CMOS technologies, especially due to their tendency to form at interfaces with Si (e.g. silicates). These pseudobinary systems also thereby enable the use of other high-κ materials by serving as an interfacial high-κ layer. While work is ongoing, much research is still required, as it is clear that any material which is to replace SiO2 as the gate dielectric faces a formidable challenge. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation. © 2001 American Institute of Physics. |
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Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells J. Appl. Phys. 32, 510 (1961); http://dx.doi.org/10.1063/1.1736034 (10 pages) Online Publication Date: 11 June 2004
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In order to find an upper theoretical limit for the efficiency of p‐n junction solar energy converters, a limiting efficiency, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of hole‐electron pairs is radiative as required by the principle of detailed balance. The efficiency is also calculated for the case in which radiative recombination is only a fixed fraction fc of the total recombination, the rest being nonradiative. Efficiencies at the matched loads have been calculated with band gap and fc as parameters, the sun and cell being assumed to be blackbodies with temperatures of 6000°K and 300°K, respectively. The maximum efficiency is found to be 30% for an energy gap of 1.1 ev and fc = 1. Actual junctions do not obey the predicted current‐voltage relationship, and reasons for the difference and its relevance to efficiency are discussed. |
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Plasmonics: Localization and guiding of electromagnetic energy in metal/dielectric structures J. Appl. Phys. 98, 011101 (2005); http://dx.doi.org/10.1063/1.1951057 (10 pages) Online Publication Date: 11 July 2005
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We review the basic physics of surface-plasmon excitations occurring at metal/dielectric interfaces with special emphasis on the possibility of using such excitations for the localization of electromagnetic energy in one, two, and three dimensions, in a context of applications in sensing and waveguiding for functional photonic devices. Localized plasmon resonances occurring in metallic nanoparticles are discussed both for single particles and particle ensembles, focusing on the generation of confined light fields enabling enhancement of Raman-scattering and nonlinear processes. We then survey the basic properties of interface plasmons propagating along flat boundaries of thin metallic films, with applications for waveguiding along patterned films, stripes, and nanowires. Interactions between plasmonic structures and optically active media are also discussed.
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J. Appl. Phys. 93, 793 (2003); http://dx.doi.org/10.1063/1.1524305 (26 pages) Online Publication Date: 27 December 2002
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Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3ω method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology. © 2003 American Institute of Physics. |
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Annealing effects on optical properties of low temperature grown ZnO nanorod arrays J. Appl. Phys. 105, 053503 (2009); http://dx.doi.org/10.1063/1.3073993 (7 pages) Online Publication Date: 4 March 2009
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Vertically well-aligned ZnO nanorods on Si substrates were prepared by a two-step chemical bath deposition method. The structure and optical properties of the grown ZnO nanorods were investigated by Raman and photoluminescence spectroscopy. The results showed that after an annealing treatment at around 500 °C in air atmosphere, the crystal structure and optical properties became much better due to the decrease in surface defects. The resonant Raman measurements excited by 351.1 nm not only revealed that the surface defects play a significant role in the as-grown sample, which was supported by low temperature time-resolved photoluminescence measurements, but also suggested that the strong intensity increase in some Raman scatterings was due to both outgoing resonant Raman scattering effect and deep level defect scattering contribution for ZnO nanorods annealed from 500 to 700 °C.
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Luminescence properties of defects in GaN J. Appl. Phys. 97, 061301 (2005); http://dx.doi.org/10.1063/1.1868059 (95 pages) Online Publication Date: 15 March 2005
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Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.
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Microwave switches based on graphene J. Appl. Phys. 105, 054309 (2009); http://dx.doi.org/10.1063/1.3080130 (3 pages) Online Publication Date: 11 March 2009
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We investigated a double-clamped graphene device positioned over a planar waveguide in which propagate electromagnetic fields up to 60 GHz. Several double-clamped graphene flakes display good characteristics in enabling and disabling the propagation of high-frequency electromagnetic fields. The same characteristics were retrieved in a graphene switch based on the rapid change in the resistivity due to an applied gate voltage. Both devices are among the fastest switches, the switching time being very short less than 1 ns.
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Impedance spectroscopy studies on polycrystalline BiFeO3 thin films on Pt/Si substrates J. Appl. Phys. 105, 054103 (2009); http://dx.doi.org/10.1063/1.3078822 (6 pages) Online Publication Date: 4 March 2009
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In this paper, we report on the results of temperature dependent impedance measurements on chemical solution deposited BiFeO3 thin films on Pt/Si substrates. X-ray diffraction analysis showed the presence of predominately single phase BiFeO3. The measurements were made in the frequency range of 100–107 Hz and between 27 and 250 °C. Plots between real and imaginary parts of impedance (Z′ and Z″) and electrical modulus (M′ and M″) in the above frequency and temperature domain suggest the presence of two relaxation regimes which are attributed to bulk and grain boundary responses. Below 150 °C, both conductivity and real dielectric constant show a steplike behavior. The frequency independent regions in 10–100 kHz indicate relaxation of the bulk conduction, while at lower frequency there is a strong frequency dependence associated with the dispersion toward relaxation of the grain boundary. In contrast, at and above 150 °C, frequency independent behavior of dc conduction becomes dominant. The bulk dielectric constant was estimated as ∼ 225, which is close to the values reported in the literature. Estimated grain and grain boundary conductivity activation energies are 0.28 and 0.81 eV, respectively.
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Parametric Interaction of Focused Gaussian Light Beams J. Appl. Phys. 39, 3597 (1968); http://dx.doi.org/10.1063/1.1656831 (43 pages) Online Publication Date: 19 November 2003
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A theoretical study is presented on the optimization of second harmonic generation (SHG) and parametric generation (PG) by a laser beam in a uniaxial nonlinear crystal. Numerically computed curves show the dependence of the SHG power, and the reciprocal of the PG threshold power, on the parameter l∕b, where l is the optical path length in the crystal and b is the confocal parameter (determined by the focal length of the focusing lens and the minimum radius of the laser beam, assumed to be in the TEM00 mode of an optical resonator). The calculations take full account of diffraction and double refraction. In the absence of double refraction, the optimum focusing condition is found to be l∕b=2.84. For PG the optimization of the crystal length l is also discussed, and curves are given showing the dependence of the threshold on l for the case in which signal and idler have the same losses. It is shown that the computed functions are also relevant to the mixing of two Gaussian beams and to parametric amplification. Pump depletion is neglected. Appendices are provided on (1) the theory of Gaussian extraordinary beams and the extension of the theory to cover both positive and negative birefringent crystals, (2) the general definition of nonlinear coefficients, (3) the effective nonlinear coefficient, and (4) details of the computations. The theory of the PG threshold is applied to tellurium and LiNbO3. On the basis of reasonable assumptions about the losses, a PG threshold of 1.0 W is obtained for a pump at 10.6 μ in Te. The optimum length is found to be l=0.14 cm. For LiNbO3 of length l=1 cm the threshold is 22 mW at 0.5147 μ. Also calculated is the quantum efficiency for up‐conversion in HgS from 10.6 to 0.6729 μ using the 0.6328 μ He☒Ne laser. |
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Crystal-field split levels of Nd3+ ions in GaN measured by luminescence spectroscopy J. Appl. Phys. 105, 053101 (2009); http://dx.doi.org/10.1063/1.3082500 (5 pages) Online Publication Date: 3 March 2009
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We present the Stark energy sublevels of Nd3+ ions in GaN grown by plasma-assisted molecular beam epitaxy as determined by luminescence spectra. We correlate the photoluminescence spectra with transitions from the 4F3/2 excited state to the 4I9/2, 4I11/2, and 4I13/2 multiplets of the Nd3+ ion for above and below bandgap excitation, with the strongest emission occurring at 1.12 eV (1106 nm). We determine a splitting of the 4F3/2 excited state to be 4.1 meV. From photoluminescence excitation spectra, we also identify the Stark sublevels of the upper states 4F5/2, 2H9/2, 4F7/2, 4S3/2, 2G7/2, and 4G5/2. Photoluminescence excitation spectra reveal an optimal excitation energy of 1.48 eV (836 nm). Site-selective spectroscopy studies using combined excitation-emission spectroscopy with confocal microscopy indicate enhanced substantial doping at the Ga site.
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Enhanced multiferroic characteristics in NaNbO3-modified BiFeO3 ceramics J. Appl. Phys. 105, 054107 (2009); http://dx.doi.org/10.1063/1.3081648 (5 pages) Online Publication Date: 11 March 2009
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Modification of BiFeO3 multiferroic ceramics were investigated by introducing NaNbO3 to form (Bi1−xNax)(Fe1−xNbx)O3 (x = 0.1, 0.3, and 0.5) solid solutions. With increasing NaNbO3 content, the crystalline structure changed and the ferroelectric properties were improved. The significantly reduced leakage resulted in more regular ferroelectric hysteresis loop for all compositions. Dielectric characteristics of (Bi1−xNax)(Fe1−xNbx)O3 (x = 0.1, 0.3, and 0.5) ceramics were evaluated. Two dielectric relaxations were observed in the temperature ranges of 550–600 and 650–710 K in (Bi0.9Na0.1)(Fe0.9Nb0.1)O3 ceramics, and the higher-temperature dielectric relaxation was related to the antiferromagnetism transition, which indicated the coupling between the ferroelectric and magnetic orders essential for the multiferroic materials. Moreover, weak ferromagnetism with remnant magnetization (Mr) of 0.14 emu/g and coercive field (Hc) of 6.48 kOe were observed in the sample with x = 0.1, which suggested that the present modified ceramics had enhanced multiferroic characteristics.
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Strong plasmon absorption in InN thin films J. Appl. Phys. 105, 053104 (2009); http://dx.doi.org/10.1063/1.3088879 (5 pages) Online Publication Date: 9 March 2009
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We have fabricated InN thin films using rf magnetron sputtering from an indium (In) metal target. Optical and electrical measurements show that these as-grown films are n-type with carrier concentrations ranging from 1020 to 1021 cm−3. This variation in carrier density is produced by controlling the conditions during the deposition. We used Rutherford backscattering spectrometry to identify possible sources for n-type carriers. We found that in addition to strong direct bandgap optical absorption ranging from 1.4 to 2.0 eV, a large plasmon absorption peak in the infrared region (0.45–0.8 eV) is also observed. This tunable IR absorption suggests that these highly degenerate InN films could be used for a number of applications, including optical filters and infrared devices.
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J. Appl. Phys. 105, 043102 (2009); http://dx.doi.org/10.1063/1.3075596 (7 pages) Online Publication Date: 17 February 2009
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We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonly encountered extended defect of a-plane GaN: I1 basal stacking fault. Cathodoluminescence measurements show that these stacking faults are essentially located in the windows and the N-face wings of the ELO-GaN and that they can appear isolated as well as organized into bundles. Time-integrated and time-resolved photoluminescence, supported by a qualitative model, evidence not only the efficient trapping of free excitons (FXs) by basal plane stacking faults but also some localization inside I1 stacking faults themselves. Measurements at room temperature show that FXs recombine efficiently with rather long luminescence decay times (360 ps), comparable to those encountered in high-quality GaN epilayers. We discuss the possible role of I1 stacking faults in the overall recombination mechanism of excitons.
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