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Top 20 Most Read Articles
January 2011
The 20 articles with the most full-text downloads during the month, in descending order.
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Future direction of direct writing J. Appl. Phys. 108, 102801 (2010); http://dx.doi.org/10.1063/1.3510359 (6 pages) Online Publication Date: 24 November 2010
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Direct write technology using special inks consisting of finely dispersed metal nanoparticles in liquid is receiving an undivided attention in recent years for its wide range of applicability in modern electronic industry. The application of this technology covers radio frequency identification-tag (RFID-tag), flexible-electronics, organic light emitting diodes (OLED) display, e-paper, antenna, bumpers used in flip-chip, underfilling, frit, miniresistance applications and biological uses, artificial dental applications and many more. In this paper, the authors have reviewed various direct write technologies on the market and discussed their advantages and shortfalls. Emphasis has given on microdispensing deposition write (MDDW), maskless mesoscale materials deposition (M3D), and ink-jet technologies. All of these technologies allow printing various patterns without employing a mask or a resist with an enhanced speed with the aid of computer. MDDW and M3D are capable of drawing patterns in three-dimension and MDDW, in particular, is capable of writing nanoinks with high viscosity. However, it is still far away for direct write to be fully implemented in the commercial arena. One of the hurdles to overcome is in manufacturing conductive inks which are chemically and physically stable, capable of drawing patterns with acceptable conductivity, and also capable of drawing patterns with acceptable adhesiveness with the substrates. The authors have briefly discussed problems involved in manufacturing nanometal inks to be used in various writing devices. There are numerous factors to be considered in manufacturing such inks. They are reducing agents, concentrations, oxidation, compact ability allowing good conductivity, and stability in suspension.
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A comprehensive review of ZnO materials and devices J. Appl. Phys. 98, 041301 (2005); http://dx.doi.org/10.1063/1.1992666 (103 pages) Online Publication Date: 30 August 2005
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The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by
Bunn [Proc. Phys. Soc. London 47, 836 (1935)
], studies of its vibrational properties with Raman scattering in 1966 by
Damen et al. [Phys. Rev. 142, 570 (1966)
], detailed optical studies in 1954 by
Mollwo [Z. Angew. Phys. 6, 257 (1954)
], and its growth by chemical-vapor transport in 1970 by
Galli and Coker [Appl. Phys. Lett. 16, 439 (1970)
]. In terms of devices, Au Schottky barriers in 1965 by
Mead [Phys. Lett. 18, 218 (1965)
], demonstration of light-emitting diodes (1967) by
Drapak [Semiconductors 2, 624 (1968)
], in which Cu2O was used as the p-type material, metal-insulator-semiconductor structures (1974) by
Minami et al. [Jpn. J. Appl. Phys. 13, 1475 (1974)
], ZnO/ZnSe n-p junctions (1975) by
Tsurkan et al. [Semiconductors 6, 1183 (1975)
], and Al/Au Ohmic contacts by
Brillson [J. Vac. Sci. Technol. 15, 1378 (1978)
] were attained. The main obstacle to the development of ZnO has been the lack of reproducible and low-resistivity p-type ZnO, as recently discussed by
Look and Claflin [Phys. Status Solidi B 241, 624 (2004)
]. While ZnO already has many industrial applications owing to its piezoelectric properties and band gap in the near ultraviolet, its applications to optoelectronic devices has not yet materialized due chiefly to the lack of p-type epitaxial layers. Very high quality what used to be called whiskers and platelets, the nomenclature for which gave way to nanostructures of late, have been prepared early on and used to deduce much of the principal properties of this material, particularly in terms of optical processes. The suggestion of attainment of p-type conductivity in the last few years has rekindled the long-time, albeit dormant, fervor of exploiting this material for optoelectronic applications. The attraction can simply be attributed to the large exciton binding energy of 60 meV of ZnO potentially paving the way for efficient room-temperature exciton-based emitters, and sharp transitions facilitating very low threshold semiconductor lasers. The field is also fueled by theoretical predictions and perhaps experimental confirmation of ferromagnetism at room temperature for potential spintronics applications. This review gives an in-depth discussion of the mechanical, chemical, electrical, and optical properties of ZnO in addition to the technological issues such as growth, defects, p-type doping, band-gap engineering, devices, and nanostructures.
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J. Appl. Phys. 108, 071301 (2010); http://dx.doi.org/10.1063/1.3460809 (38 pages) Online Publication Date: 13 October 2010
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Since its discovery in less than five years ago, graphene has become one of the hottest frontiers in materials science and condensed matter physics, as evidenced by the exponential increase in number of publications in this field. Several reviews have already been published on this topic, focusing on single and multilayer graphene sheets. Here, we review the recent progresses in this field by extending the scope to various types of two-dimensional carbon nanostructures including graphene and free-standing carbon nanowalls/nanosheets. After a brief overview of the electronic properties of graphene, we focus on the synthesis, characterization and potential applications of these carbon nanostructures.
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Ion and electron irradiation-induced effects in nanostructured materials J. Appl. Phys. 107, 071301 (2010); http://dx.doi.org/10.1063/1.3318261 (70 pages) Online Publication Date: 6 April 2010
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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.
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Band parameters for III–V compound semiconductors and their alloys J. Appl. Phys. 89, 5815 (2001); http://dx.doi.org/10.1063/1.1368156 (61 pages)
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We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. © 2001 American Institute of Physics. |
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Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells J. Appl. Phys. 32, 510 (1961); http://dx.doi.org/10.1063/1.1736034 (10 pages) Online Publication Date: 11 June 2004
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In order to find an upper theoretical limit for the efficiency of p‐n junction solar energy converters, a limiting efficiency, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of hole‐electron pairs is radiative as required by the principle of detailed balance. The efficiency is also calculated for the case in which radiative recombination is only a fixed fraction fc of the total recombination, the rest being nonradiative. Efficiencies at the matched loads have been calculated with band gap and fc as parameters, the sun and cell being assumed to be blackbodies with temperatures of 6000°K and 300°K, respectively. The maximum efficiency is found to be 30% for an energy gap of 1.1 ev and fc = 1. Actual junctions do not obey the predicted current‐voltage relationship, and reasons for the difference and its relevance to efficiency are discussed. |
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Surface plasmon enhanced silicon solar cells J. Appl. Phys. 101, 093105 (2007); http://dx.doi.org/10.1063/1.2734885 (8 pages) Online Publication Date: 7 May 2007
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Thin-film solar cells have the potential to significantly decrease the cost of photovoltaics. Light trapping is particularly critical in such thin-film crystalline silicon solar cells in order to increase light absorption and hence cell efficiency. In this article we investigate the suitability of localized surface plasmons on silver nanoparticles for enhancing the absorbance of silicon solar cells. We find that surface plasmons can increase the spectral response of thin-film cells over almost the entire solar spectrum. At wavelengths close to the band gap of Si we observe a significant enhancement of the absorption for both thin-film and wafer-based structures. We report a sevenfold enhancement for wafer-based cells at λ = 1200 nm and up to 16-fold enhancement at λ = 1050 nm for 1.25 μm thin silicon-on-insulator (SOI) cells, and compare the results with a theoretical dipole-waveguide model. We also report a close to 12-fold enhancement in the electroluminescence from ultrathin SOI light-emitting diodes and investigate the effect of varying the particle size on that enhancement.
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Reliability of gravure offset printing under various printing conditions J. Appl. Phys. 108, 102802 (2010); http://dx.doi.org/10.1063/1.3510466 (6 pages) Online Publication Date: 24 November 2010
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This paper focuses on the reliability of gravure offset printing and presents a mechanism on how the width of the printed line increases on repeated printings. Of the various printing process parameters, such as the resting times between doctoring, off, and set, printing velocity, printing pressure, and so forth, we investigated the effects of printing velocity, printing pressure, and blanket’s thickness on the reliability of gravure offset printing. As the printing velocity increases, the reliability of gravure offset printing also increases. This is because the actual contact time between ink and blanket decreases, resulting in less solvent absorption into the blanket. Printing pressure does not have much influence on reliability. Even though some change was observed, it was within the range of experimental error. Under sufficient printing pressure, this observation implies that the more important factor as regards the absorption model is time rather than pressure. As the thickness of the blanket increases, the reliability also increases. In the case of a thin blanket, in particular, the reliability of gravure offset printing is sensitive to changes in thickness.
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High efficiency semimetal/semiconductor nanocomposite thermoelectric materials J. Appl. Phys. 108, 123702 (2010); http://dx.doi.org/10.1063/1.3514145 (5 pages) Online Publication Date: 20 December 2010
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Rare-earth impurities in III–V semiconductors are known to self-assemble into semimetallic nanoparticles which have been shown to reduce lattice thermal conductivity without harming electronic properties. Here, we show that adjusting the band alignment between ErAs and In0.53Ga0.47−XAlXAs allows energy-dependent scattering of carriers that can be used to increase thermoelectric power factor. Films of various Al concentrations were grown by molecular beam epitaxy, and thermoelectric properties were characterized. We observe concurrent increases in electrical conductivity and Seebeck coefficient with increasing temperatures, demonstrating energy-dependent scattering. We report the first simultaneous power factor enhancement and thermal conductivity reduction in a nanoparticle-based system, resulting in a high figure of merit, ZT = 1.33 at 800 K.
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Small molecular weight organic thin-film photodetectors and solar cells J. Appl. Phys. 93, 3693 (2003); http://dx.doi.org/10.1063/1.1534621 (31 pages) Online Publication Date: 21 March 2003
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In this review, we discuss the physics underlying the operation of single and multiple heterojunction, vacuum-deposited organic solar cells based on small molecular weight thin films. For single heterojunction cells, we find that the need for direct contact between the deposited electrode and the active organics leads to quenching of excitons. An improved device architecture, the double heterojunction, is shown to confine excitons within the active layers, allowing substantially higher internal efficiencies to be achieved. A full optical and electrical analysis of the double heterostructure architecture leads to optimal cell design as a function of the optical properties and exciton diffusion lengths of the photoactive materials. Combining the double heterostructure with novel light trapping schemes, devices with external efficiencies approaching their internal efficiency are obtained. When applied to an organic photovoltaic cell with a power conversion efficiency of 1.0%±0.1% under 1 sun AM1.5 illumination, devices with external power conversion efficiencies of 2.4%±0.3% are reported. In addition, we show that by using materials with extended exciton diffusion lengths LD, highly efficient double heterojunction photovoltaic cells are obtained, even in the absence of a light trapping geometry. Using C60 as an acceptor material, double heterostructure external power conversion efficiencies of 3.6%±0.4% under 1 sun AM1.5 illumination are obtained. Stacking of single heterojunction devices leads to thin film multiple heterojunction photovoltaic and photodetector structures. Thin bilayer photovoltaic cells can be stacked with ultrathin (∼5 Å), discontinuous Ag layers between adjacent cells serving as efficient recombination sites for electrons and holes generated in the neighboring cells. Such stacked cells have open circuit voltages that are n times the open circuit voltage of a single cell, where n is the number of cells in the stack. In optimized structures, the short circuit photocurrent remains approximately constant upon stacking thin cells, leading to higher achievable power conversion efficiencies, as confirmed by modelling optical interference effects and exciton migration. A 2.5%±0.3% power efficiency under 100 mW/cm2 AM1.5 illumination conditions is obtained by stacking two ∼1% efficient devices. Alternatively, when the contact layers between the stacked cells are eliminated, a multilayer structure consisting of alternating films of donor and acceptor-type materials is obtained. Since the thicknesses of the individual layers (∼5 Å) can be substantially smaller than the exciton diffusion length, nearly 100% of the photogenerated excitons are dissociated, and the resulting free charges are detected. In addition, the ultrathin organic layers facilitate electron and hole transport through the multilayer stack by tunneling. When these devices are operated as photodetectors under applied fields >106 V/cm, the carrier collection efficiency reaches 80%, leading to external quantum efficiencies of 75%±1% across the visible spectrum in cells containing the thinnest layers. We find that due to the fast carrier tunneling process, the temporal response of these multilayer detectors is a direct measure of exciton dynamics. Response times of 720±50 ps are achieved, leading to a 3 dB bandwidth of 430±30 MHz. A summary of representative results obtained for both polymer and small molecule photovoltaic cells and photodetectors is included in this review. Prospects for further improvements in organic solar cells and photodetectors are considered. © 2003 American Institute of Physics. |
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Multiferroic magnetoelectric composites: Historical perspective, status, and future directions J. Appl. Phys. 103, 031101 (2008); http://dx.doi.org/10.1063/1.2836410 (35 pages) Online Publication Date: 5 February 2008
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Multiferroic magnetoelectric materials, which simultaneously exhibit ferroelectricity and ferromagnetism, have recently stimulated a sharply increasing number of research activities for their scientific interest and significant technological promise in the novel multifunctional devices. Natural multiferroic single-phase compounds are rare, and their magnetoelectric responses are either relatively weak or occurs at temperatures too low for practical applications. In contrast, multiferroic composites, which incorporate both ferroelectric and ferri-/ferromagnetic phases, typically yield giant magnetoelectric coupling response above room temperature, which makes them ready for technological applications. This review of mostly recent activities begins with a brief summary of the historical perspective of the multiferroic magnetoelectric composites since its appearance in 1972. In such composites the magnetoelectric effect is generated as a product property of a magnetostrictive and a piezoelectric substance. An electric polarization is induced by a weak ac magnetic field oscillating in the presence of a dc bias field, and/or a magnetization polarization appears upon applying an electric field. So far, three kinds of bulk magnetoelectric composites have been investigated in experimental and theoretical, i.e., composites of (a) ferrite and piezoelectric ceramics (e.g., lead zirconate titanate), (b) magnetic metals/alloys (e.g., Terfenol-D and Metglas) and piezoelectric ceramics, and (c) Terfenol-D and piezoelectric ceramics and polymer. The elastic coupling interaction between the magnetostrictive phase and piezoelectric phase leads to giant magnetoelectric response of these magnetoelectric composites. For example, a Metglas/lead zirconate titanate fiber laminate has been found to exhibit the highest magnetoelectric coefficient, and in the vicinity of resonance, its magnetoelectric voltage coefficient as high as 102 V/cm Oe orders has been achieved, which exceeds the magnetoelectric response of single-phase compounds by many orders of magnitude. Of interest, motivated by on-chip integration in microelectronic devices, nanostructured composites of ferroelectric and magnetic oxides have recently been deposited in a film-on substrate geometry. The coupling interaction between nanosized ferroelectric and magnetic oxides is also responsible for the magnetoelectric effect in the nanostructures as was the case in those bulk composites. The availability of high-quality nanostructured composites makes it easier to tailor their properties through epitaxial strain, atomic-level engineering of chemistry, and interfacial coupling. In this review, we discuss these bulk and nanostructured magnetoelectric composites both in experimental and theoretical. From application viewpoint, microwave devices, sensors, transducers, and heterogeneous read/write devices are among the suggested technical implementations of the magnetoelectric composites. The review concludes with an outlook on the exciting future possibilities and scientific challenges in the field of multiferroic magnetoelectric composites.
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High temperature Seebeck coefficient metrology J. Appl. Phys. 108, 121101 (2010); http://dx.doi.org/10.1063/1.3503505 (12 pages) Online Publication Date: 22 December 2010
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We present an overview of the challenges and practices of thermoelectric metrology on bulk materials at high temperature (300 to 1300 K). The Seebeck coefficient, when combined with thermal and electrical conductivity, is an essential property measurement for evaluating the potential performance of novel thermoelectric materials. However, there is some question as to which measurement technique(s) provides the most accurate determination of the Seebeck coefficient at high temperature. This has led to the implementation of nonideal practices that have further complicated the confirmation of reported high ZT materials. To ensure meaningful interlaboratory comparison of data, thermoelectric measurements must be reliable, accurate, and consistent. This article will summarize and compare the relevant measurement techniques and apparatus designs required to effectively manage uncertainty, while also providing a reference resource of previous advances in high temperature thermoelectric metrology.
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J. Appl. Phys. 109, 011101 (2011); http://dx.doi.org/10.1063/1.3511746 (11 pages) Online Publication Date: 11 January 2011
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By examining the electric field induced processes in glasses and glass-metal nanocomposites (GMN) we propose mechanism of the electric field assisted dissolution (EFAD) of metal nanoparticles in glass. We show that in both glass poling and EFAD processes, the strong (up to 1 V/nm) local electric field in the subanodic region is due to the presence of “slow” hydrogen ions bonded to nonbridging oxygen atoms in glass matrix. However, the origin of these hydrogen ions in glass and GMN is different. Specifically, when we apply the electric field to a virgin glass, the enrichment of the glass with hydrogen species takes place in the course of the poling. In GMN, the hydrogen ions have been incorporated into the glass matrix during metal nanoparticles formation via reduction in a metal by hydrogen, i.e., before the electric field was applied. The EFAD of metal nanoparticles resembles the electric field stimulated diffusion of metal film in glass (the important difference however is that in GMN, there is no direct contact of dissolving metal entity with anodic electrode). This similarity makes it possible to estimate the energy of thermal activated transition of silver atoms from a nanoparticle to glass matrix as ∼ 1.3 eV. Electroneutrality of the GMN requires emission of electrons from nanoparticles. Photoconductivity spectra of soda-lime glasses and the results of numerical calculations of band structure of fused silica, sodium disilicate and sodium-calcium-silicate glass enable us to evaluate the bandgap and the position of electron mobility edge in soda-lime glass. The evaluated values are ∼ 6 eV and ∼ 1.2 eV below vacuum level, respectively. The bent of the glass band structure in strong electric field permits a direct tunneling of Fermi electrons from silver nanoparticle (4.6 eV below the vacuum level) to the glass conductivity band. Evaluated in accordance with the Fowler–Nordheim equation the magnitude of electric field necessary to establish comparable electron emission and ion ejection rates is ∼ 0.27 V/nm, although other phenomena including polarization of the nanoparticles and tunneling of electrons thermally distributed above Fermi level, decreases this magnitude. We believe that the different mechanisms of ejection for electrons and ions should result in charging nanoparticles in EFAD process. The electron tunneling to localized OH− states and glass matrix relaxation process are also discussed.
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Inverse spin-Hall effect in palladium at room temperature J. Appl. Phys. 108, 113925 (2010); http://dx.doi.org/10.1063/1.3517131 (4 pages) Online Publication Date: 15 December 2010
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The inverse spin-Hall effect, conversion of a spin current into electromotive force, has been investigated in a simple Ni81Fe19/Pd film using the spin pumping. In the Ni81Fe19/Pd film, a spin current generated by the spin pumping is converted into an electromotive force using the inverse spin-Hall effect in the Pd layer. From the magnitude of the electromotive force, we estimated the spin-Hall angle for Pd as 0.01. This large spin-Hall angle for Pd is consistent with the prediction from the Gilbert damping enhancement due to the spin pumping. This value will be a crucial piece of information for spintronics device engineering.
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Spin transport in bilayer graphene J. Appl. Phys. 109, 013706 (2011); http://dx.doi.org/10.1063/1.3525650 (3 pages) Online Publication Date: 5 January 2011
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In this work, we perform a study of spin transport in bilayer graphene using semiclassical Monte Carlo simulation. Both the D’yakonov–Perel’ (DP) and Elliot–Yafet (EY) mechanisms for spin relaxation are considered. A vertical field of varying magnitude is applied across the bilayer and the dependence of the spin relaxation length on the applied field is considered. It is found that the spin relaxation length is a function of the applied vertical field, due to the effects of the EY and DP mechanisms, and the relaxation length reaches a maximum for a particular value of the vertical field.
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J. Appl. Phys. 108, 102701 (2010); http://dx.doi.org/10.1063/1.3510244 (1 page) Online Publication Date: 24 November 2010
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Some consequences of experiments with a plasmonic quantum eraser for plasmon tomography J. Appl. Phys. 109, 023101 (2011); http://dx.doi.org/10.1063/1.3533730 (7 pages) Online Publication Date: 18 January 2011
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We discuss two important consequences of recent experiments using surface plasmon polariton (SPP) tomography in a quantum eraser arrangement. In these experiments surface-emission images were modified by manipulating the polarization state of the leakage radiation. We show that SPP tomography does have the potential to produce images that mirror with high fidelity the propagation and interference of SPP beams at the metal–air interface of a sample. We reveal the physical mechanism behind this capability of SPP tomography. In addition, we show how SPP tomography can be used to detect photons passing through the dark fringes of an interference pattern and why photons propagate in such a way that looks like a photon can propagate across a region where it is never observed.
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Thermoelectric properties of nanostructured Si1−xGex and potential for further improvement J. Appl. Phys. 108, 124306 (2010); http://dx.doi.org/10.1063/1.3518579 (8 pages) Online Publication Date: 20 December 2010
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We theoretically investigate the thermoelectric properties of sintered SiGe alloys, compare them with new and previous experimental measurements, and evaluate their potential for further improvement. The theoretical approach is validated by extensive comparison of predicted bulk mobility, thermopower, and thermal conductivity, for varying Ge and doping concentrations, in the 300–1000K temperature range. The effect of grain boundaries is then included for Si0.8Ge0.2 sintered nanopowders and used to predict optimized values of the thermoelectric figure of merit at different grain sizes. Our calculations suggest that further optimization of current state of the art n-type (p-type) material would be feasible, possibly leading to ∼ 5% (4%) ZT enhancement at 1000 K and 16% (6%) at room temperature. Even larger enhancements should be possible if the phonon scattering probability of the grain boundaries could be increased beyond its present value.
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Advanced mechanical properties of graphene paper J. Appl. Phys. 109, 014306 (2011); http://dx.doi.org/10.1063/1.3528213 (6 pages) Online Publication Date: 6 January 2011
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Graphene paper (GP) has been prepared by flow-directed assembly of graphene nanosheets. The mechanical properties of as-prepared GPs were investigated by tensile, indentation, and bending tests. Heat treated GPs demonstrate superior hardness, ten times that of synthetic graphite, and two times that of carbon steel; besides, their yielding strength is significantly higher than that of carbon steel. GPs show extremely high modulus of elasticity during bending test; in the range of a few terapascal. The high strength and stiffness of GP is ascribed to the interlocking-tile microstructure of individual graphene nanosheets in the paper. These outstanding mechanical properties of GPs could lead to a wide range of engineering applications.
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J. Appl. Phys. 108, 123905 (2010); http://dx.doi.org/10.1063/1.3524479 (9 pages) Online Publication Date: 23 December 2010
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In this article, the dynamic magnetostrictive effect of giant magnetostrictive materials is studied and a novel general nonlinear transient constitutive model is established, in which the eddy current effects are incorporated. The validity and reliability of the obtained nonlinear transient constitutive model are verified by comparing its predicted results with existing experimental data. The excellent agreements between predicted results and experimental data indicate that the nonlinear transient constitutive model with eddy current effects can accurately capture frequency-dependent hysteretic behavior exhibited by giant magnetostrictive materials under different applied magnetic field amplitudes and frequencies. Moreover, the obtained constitutive model can also effectively capture the nonlinear magnetic-elastic-thermal coupling effect of giant magnetostrictive materials, since the stress and temperature-dependencies are incorporated in the nonlinear transient constitutive model. In such a case, the influences of exciting frequency and temperature on the dynamic magnetostrictive effect of giant magnetostrictive materials are discussed in detail by using this nonlinear transient constitutive model. The numerical simulation results evidence the notable dependences of dynamic magnetostrictive effect on exciting frequency and temperature, which indicate that the effects of eddy current and temperature on the dynamic magnetostrictive effect can not be ignored. Therefore, the nonlinear transient constitutive model with eddy current effects established in this article has great practical value for both theoretical researches and engineering applications of giant magnetostrictive materials.
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