Jump to Content
View Cart
Top 20 Most Read Articles
April 2013
The 20 articles with the most full-text downloads during the month, in descending order.
 |
Will we exceed 50% efficiency in photovoltaics? J. Appl. Phys. 110, 031301 (2011); http://dx.doi.org/10.1063/1.3600702 (19 pages) Online Publication Date: 8 August 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
|||
|
Show Abstract
Solar energy is the most abundant and reliable source of energy we have to provide for the multi-terawatt challenge we are facing. Although huge, this resource is relatively dispersed. High conversion efficiency is probably necessary for cost effectiveness. Solar cell efficiencies above 40% have been achieved with multijunction (MJ) solar cells. These achievements are here described. Possible paths for improvement are hinted at including third generation photovoltaics concepts. It is concluded that it is very likely that the target of 50% will eventually be achieved. This high efficiency requires operating under concentrated sunlight, partly because concentration helps increase the efficiency but mainly because the cost of the sophisticated cells needed can only be paid by extracting as much electric power form each cell as possible. The optical challenges associated with the concentrator optics and the tools for overcoming them, in particular non-imaging optics, are briefly discussed and the results and trends are described. It is probable that optical efficiency over 90% will be possible in the future. This would lead to a module efficiency of 45%. The manufacturing of a concentrator has to be addressed at three levels of integration: module, array, and photovoltaic (PV) subfield. The PV plant as a whole is very similar than a flat module PV plant with two-axes tracking. At the module level, the development of tools for easy manufacturing and quality control is an important topic. Furthermore, they can accommodate in different position cells with different spectral sensitivities so complementing the effort in manufacturing MJ cells. At the array level, a proper definition of the nameplate watts, since the diffuse light is not used, is under discussion. The cost of installation of arrays in the field can be very much reduced by self aligning tracking control strategies. At the subfield level, aspects such as the self shadowing of arrays causes the CPV subfields to be sparsely packed leading to a ground efficiency, in the range of 10%, that in some cases will be below that of fixed modules of much lower cell efficiency. All this taken into account, High Concentration PV (HCPV) has the opportunity to become the cheapest of the PV technologies and beat the prevalent electricity generation technologies. Of course the way will be paved with challenges, and success is not guaranteed.
|
||||
|
Show PACS
|
||||
|
|
ZnO Schottky barriers and Ohmic contacts J. Appl. Phys. 109, 121301 (2011); http://dx.doi.org/10.1063/1.3581173 (33 pages) Online Publication Date: 23 June 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
|||||||||||||
|
Show Abstract
ZnO has emerged as a promising candidate for optoelectronic and microelectronic applications, whose development requires greater understanding and control of their electronic contacts. The rapid pace of ZnO research over the past decade has yielded considerable new information on the nature of ZnO interfaces with metals. Work on ZnO contacts over the past decade has now been carried out on high quality material, nearly free from complicating factors such as impurities, morphological and native point defects. Based on the high quality bulk and thin film crystals now available, ZnO exhibits a range of systematic interface electronic structure that can be understood at the atomic scale. Here we provide a comprehensive review of Schottky barrier and ohmic contacts including work extending over the past half century. For Schottky barriers, these results span the nature of ZnO surface charge transfer, the roles of surface cleaning, crystal quality, chemical interactions, and defect formation. For ohmic contacts, these studies encompass the nature of metal-specific interactions, the role of annealing, multilayered contacts, alloyed contacts, metallization schemes for state-of-the-art contacts, and their application to n-type versus p-type ZnO. Both ZnO Schottky barriers and ohmic contacts show a wide range of phenomena and electronic behavior, which can all be directly tied to chemical and structural changes on an atomic scale.
|
||||||||||||||
|
Show PACS
|
||||||||||||||
|
|
A comprehensive review of ZnO materials and devices J. Appl. Phys. 98, 041301 (2005); http://dx.doi.org/10.1063/1.1992666 (103 pages) Online Publication Date: 30 August 2005
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by
Bunn [Proc. Phys. Soc. London 47, 836 (1935)
], studies of its vibrational properties with Raman scattering in 1966 by
Damen et al. [Phys. Rev. 142, 570 (1966)
], detailed optical studies in 1954 by
Mollwo [Z. Angew. Phys. 6, 257 (1954)
], and its growth by chemical-vapor transport in 1970 by
Galli and Coker [Appl. Phys. Lett. 16, 439 (1970)
]. In terms of devices, Au Schottky barriers in 1965 by
Mead [Phys. Lett. 18, 218 (1965)
], demonstration of light-emitting diodes (1967) by
Drapak [Semiconductors 2, 624 (1968)
], in which Cu2O was used as the p-type material, metal-insulator-semiconductor structures (1974) by
Minami et al. [Jpn. J. Appl. Phys. 13, 1475 (1974)
], ZnO/ZnSe n-p junctions (1975) by
Tsurkan et al. [Semiconductors 6, 1183 (1975)
], and Al/Au Ohmic contacts by
Brillson [J. Vac. Sci. Technol. 15, 1378 (1978)
] were attained. The main obstacle to the development of ZnO has been the lack of reproducible and low-resistivity p-type ZnO, as recently discussed by
Look and Claflin [Phys. Status Solidi B 241, 624 (2004)
]. While ZnO already has many industrial applications owing to its piezoelectric properties and band gap in the near ultraviolet, its applications to optoelectronic devices has not yet materialized due chiefly to the lack of p-type epitaxial layers. Very high quality what used to be called whiskers and platelets, the nomenclature for which gave way to nanostructures of late, have been prepared early on and used to deduce much of the principal properties of this material, particularly in terms of optical processes. The suggestion of attainment of p-type conductivity in the last few years has rekindled the long-time, albeit dormant, fervor of exploiting this material for optoelectronic applications. The attraction can simply be attributed to the large exciton binding energy of 60 meV of ZnO potentially paving the way for efficient room-temperature exciton-based emitters, and sharp transitions facilitating very low threshold semiconductor lasers. The field is also fueled by theoretical predictions and perhaps experimental confirmation of ferromagnetism at room temperature for potential spintronics applications. This review gives an in-depth discussion of the mechanical, chemical, electrical, and optical properties of ZnO in addition to the technological issues such as growth, defects, p-type doping, band-gap engineering, devices, and nanostructures.
|
|||
|
Show PACS
|
|||
|
|
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells J. Appl. Phys. 32, 510 (1961); http://dx.doi.org/10.1063/1.1736034 (10 pages) Online Publication Date: 11 June 2004
Full Text:
|
Download PDF
|
||
|
Show Abstract
In order to find an upper theoretical limit for the efficiency of p‐n junction solar energy converters, a limiting efficiency, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of hole‐electron pairs is radiative as required by the principle of detailed balance. The efficiency is also calculated for the case in which radiative recombination is only a fixed fraction fc of the total recombination, the rest being nonradiative. Efficiencies at the matched loads have been calculated with band gap and fc as parameters, the sun and cell being assumed to be blackbodies with temperatures of 6000°K and 300°K, respectively. The maximum efficiency is found to be 30% for an energy gap of 1.1 ev and fc = 1. Actual junctions do not obey the predicted current‐voltage relationship, and reasons for the difference and its relevance to efficiency are discussed. |
|||
|
|
Adaptive oxide electronics: A review J. Appl. Phys. 110, 071101 (2011); http://dx.doi.org/10.1063/1.3640806 (20 pages) Online Publication Date: 5 October 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Novel information processing techniques are being actively explored to overcome fundamental limitations associated with CMOS scaling. A new paradigm of adaptive electronic devices is emerging that may reshape the frontiers of electronics and enable new modalities. Creating systems that can learn and adapt to various inputs has generally been a complex algorithm problem in information science, albeit with wide-ranging and powerful applications from medical diagnosis to control systems. Recent work in oxide electronics suggests that it may be plausible to implement such systems at the device level, thereby drastically increasing computational density and power efficiency and expanding the potential for electronics beyond Boolean computation. Intriguing possibilities of adaptive electronics include fabrication of devices that mimic human brain functionality: the strengthening and weakening of synapses emulated by electrically, magnetically, thermally, or optically tunable properties of materials.In this review, we detail materials and device physics studies on functional metal oxides that may be utilized for adaptive electronics. It has been shown that properties, such as resistivity, polarization, and magnetization, of many oxides can be modified electrically in a non-volatile manner, suggesting that these materials respond to electrical stimulus similarly as a neural synapse. We discuss what device characteristics will likely be relevant for integration into adaptive platforms and then survey a variety of oxides with respect to these properties, such as, but not limited to, TaOx, SrTiO3, and Bi4-xLaxTi3O12. The physical mechanisms in each case are detailed and analyzed within the framework of adaptive electronics. We then review theoretically formulated and current experimentally realized adaptive devices with functional oxides, such as self-programmable logic and neuromorphic circuits. Finally, we speculate on what advances in materials physics and engineering may be needed to realize the full potential of adaptive oxide electronics.
|
|||
|
Show PACS
|
|||
|
|
J. Appl. Phys. 106, 064316 (2009); http://dx.doi.org/10.1063/1.3226073 (4 pages) Online Publication Date: 29 September 2009
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
In order to explain the higher short-circuit current (Jsc) with comparable open-circuit voltage (Voc) from dye-sensitized solar cells (DSCs) based on gallium-modified ZnO (ZnO:Ga) porous electrodes, the diffusion coefficient (D) and electron lifetime (τ) in DSCs with and without Ga-modified ZnO were studied by stepped light-induced transient measurements of photocurrent and voltage. In comparison to DSCs based on ZnO electrodes, the ZnO:Ga-based solar cells provided lower D and higher τ values. The results were interpreted according to the transport-limited recombination model, where the Ga modification induced a higher density of intraband charge traps. At matched electron densities, a decrease in Voc from DSCs based on ZnO:Ga was observed, suggesting a positive shift of the ZnO:Ga conduction band edge. The higher Jsc can be explained by the positive shift of the ZnO:Ga conduction band edge in addition to the increased roughness factor of the electrode due to the Ga modification.
|
|||
|
Show PACS
|
|||
|
|
Small particles, big impacts: A review of the diverse applications of nanofluids J. Appl. Phys. 113, 011301 (2013); http://dx.doi.org/10.1063/1.4754271 (19 pages) Online Publication Date: 2 January 2013
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Nanofluids—a simple product of the emerging world of nanotechnology—are suspensions of nanoparticles (nominally 1–100 nm in size) in conventional base fluids such as water, oils, or glycols. Nanofluids have seen enormous growth in popularity since they were proposed by Choi in 1995. In the year 2011 alone, there were nearly 700 research articles where the term nanofluid was used in the title, showing rapid growth from 2006 (175) and 2001 (10). The first decade of nanofluid research was primarily focused on measuring and modeling fundamental thermophysical properties of nanofluids (thermal conductivity, density, viscosity, heat transfer coefficient). Recent research, however, explores the performance of nanofluids in a wide variety of other applications. Analyzing the available body of research to date, this article presents recent trends and future possibilities for nanofluids research and suggests which applications will see the most significant improvement from employing nanofluids.
|
|||
|
Show PACS
|
|||
|
|
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends J. Appl. Phys. 113, 021301 (2013); http://dx.doi.org/10.1063/1.4757907 (101 pages) Online Publication Date: 8 January 2013
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.
|
|||
|
Show PACS
|
|||
|
|
GaN based nanorods for solid state lighting J. Appl. Phys. 111, 071101 (2012); http://dx.doi.org/10.1063/1.3694674 (23 pages) Online Publication Date: 2 April 2012
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.
|
|||
|
Show PACS
|
|||
|
|
Understanding junction breakdown in multicrystalline solar cells J. Appl. Phys. 109, 071101 (2011); http://dx.doi.org/10.1063/1.3562200 (10 pages) Online Publication Date: 12 April 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Extensive investigations on industrial multicrystalline silicon solar cells have shown that, for standard 1 Ω cm material, acid-etched texturization, and in absence of strong ohmic shunts, there are three different types of breakdown appearing in different reverse bias ranges. Between −4 and −9 V there is early breakdown (type 1), which is due to Al contamination of the surface. Between −9 and −13 V defect-induced breakdown (type 2) dominates, which is due to metal-containing precipitates lying within recombination-active grain boundaries. Beyond −13 V we may find in addition avalanche breakdown (type 3) at etch pits, which is characterized by a steep slope of the I-V characteristic, avalanche carrier multiplication by impact ionization, and a negative temperature coefficient of the reverse current. If instead of acid-etching alkaline-etching is used, all these breakdown classes also appear, but their onset voltage is enlarged by several volts. Also for cells made from upgraded metallurgical grade material these classes can be distinguished. However, due to the higher net doping concentration of this material, their onset voltage is considerably reduced here.
|
|||
|
Show PACS
|
|||
|
|
Multiferroic magnetoelectric composites: Historical perspective, status, and future directions J. Appl. Phys. 103, 031101 (2008); http://dx.doi.org/10.1063/1.2836410 (35 pages) Online Publication Date: 5 February 2008
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Multiferroic magnetoelectric materials, which simultaneously exhibit ferroelectricity and ferromagnetism, have recently stimulated a sharply increasing number of research activities for their scientific interest and significant technological promise in the novel multifunctional devices. Natural multiferroic single-phase compounds are rare, and their magnetoelectric responses are either relatively weak or occurs at temperatures too low for practical applications. In contrast, multiferroic composites, which incorporate both ferroelectric and ferri-/ferromagnetic phases, typically yield giant magnetoelectric coupling response above room temperature, which makes them ready for technological applications. This review of mostly recent activities begins with a brief summary of the historical perspective of the multiferroic magnetoelectric composites since its appearance in 1972. In such composites the magnetoelectric effect is generated as a product property of a magnetostrictive and a piezoelectric substance. An electric polarization is induced by a weak ac magnetic field oscillating in the presence of a dc bias field, and/or a magnetization polarization appears upon applying an electric field. So far, three kinds of bulk magnetoelectric composites have been investigated in experimental and theoretical, i.e., composites of (a) ferrite and piezoelectric ceramics (e.g., lead zirconate titanate), (b) magnetic metals/alloys (e.g., Terfenol-D and Metglas) and piezoelectric ceramics, and (c) Terfenol-D and piezoelectric ceramics and polymer. The elastic coupling interaction between the magnetostrictive phase and piezoelectric phase leads to giant magnetoelectric response of these magnetoelectric composites. For example, a Metglas/lead zirconate titanate fiber laminate has been found to exhibit the highest magnetoelectric coefficient, and in the vicinity of resonance, its magnetoelectric voltage coefficient as high as 102 V/cm Oe orders has been achieved, which exceeds the magnetoelectric response of single-phase compounds by many orders of magnitude. Of interest, motivated by on-chip integration in microelectronic devices, nanostructured composites of ferroelectric and magnetic oxides have recently been deposited in a film-on substrate geometry. The coupling interaction between nanosized ferroelectric and magnetic oxides is also responsible for the magnetoelectric effect in the nanostructures as was the case in those bulk composites. The availability of high-quality nanostructured composites makes it easier to tailor their properties through epitaxial strain, atomic-level engineering of chemistry, and interfacial coupling. In this review, we discuss these bulk and nanostructured magnetoelectric composites both in experimental and theoretical. From application viewpoint, microwave devices, sensors, transducers, and heterogeneous read/write devices are among the suggested technical implementations of the magnetoelectric composites. The review concludes with an outlook on the exciting future possibilities and scientific challenges in the field of multiferroic magnetoelectric composites.
|
|||
|
Show PACS
|
|||
|
|
Plasma processing of low-k dielectrics J. Appl. Phys. 113, 041101 (2013); http://dx.doi.org/10.1063/1.4765297 (41 pages) Online Publication Date: 22 January 2013
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
This paper presents an in-depth overview of the present status and novel developments in the field of plasma processing of low dielectric constant (low-k) materials developed for advanced interconnects in ULSI technology. The paper summarizes the major achievements accomplished during the last 10 years. It includes analysis of advanced experimental techniques that have been used, which are most appropriate for low-k patterning and resist strip, selection of chemistries, patterning strategies, masking materials, analytical techniques, and challenges appearing during the integration. Detailed discussions are devoted to the etch mechanisms of low-k materials and their degradation during the plasma processing. The problem of k-value degradation (plasma damage) is a key issue for the integration, and it is becoming more difficult and challenging as the dielectric constant of low-k materials scales down. Results obtained with new experimental methods, like the small gap technique and multi-beams systems with separated sources of ions, vacuum ultraviolet light, and radicals, are discussed in detail. The methods allowing reduction of plasma damage and restoration of dielectric properties of damaged low-k materials are also discussed.
|
|||
|
Show PACS
|
|||
|
|
Bridging semiconductor and magnetism J. Appl. Phys. 113, 136509 (2013); http://dx.doi.org/10.1063/1.4795537 (5 pages) Online Publication Date: 29 March 2013
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Carrier-induced ferromagnetism and its manipulation in Mn-doped III-V semiconductors, such as (In,Mn)As and (Ga,Mn)As, offer a wide variety of phenomena that originate from the interplay between magnetism and semiconducting properties, forming a bridge between semiconductor and magnetism. A review is given on the electrical manipulation of magnetism, its understanding, and potential applications both from the physics point of view and from the technological point of view. The electric-field study on magnetism is now being extended to magnetic metals, leading to an energy efficient way of magnetization reversal important for future semiconductor integrated circuit technology, yet another route to bridge semiconductor and magnetism in a fruitful way.
|
|||
|
Show PACS
|
|||
|
|
Band parameters for III–V compound semiconductors and their alloys J. Appl. Phys. 89, 5815 (2001); http://dx.doi.org/10.1063/1.1368156 (61 pages)
Full Text:
Read Online (HTML)
|
Download PDF
|
|||||||||||||||
|
Show Abstract
We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. © 2001 American Institute of Physics. |
||||||||||||||||
|
Show PACS
|
||||||||||||||||
|
|
High performance ferroelectric relaxor-PbTiO3 single crystals: Status and perspective J. Appl. Phys. 111, 031301 (2012); http://dx.doi.org/10.1063/1.3679521 (50 pages) Online Publication Date: 7 February 2012
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Ferroelectrics are essential components in a wide range of applications, including ultrasonic transducers, sensors, and actuators. In the single crystal form, relaxor-PbTiO3 (PT) piezoelectric materials have been extensively studied due to their ultrahigh piezoelectric and electromechanical properties. In this article, a perspective and future development of relaxor-PT crystals are given. Initially, various techniques for the growth of relaxor-PT crystals are reviewed, with crystals up to 100 mm in diameter and 200 mm in length being readily achievable using the Bridgman technique. Second, the characterizations of dielectric and electromechanical properties are surveyed. Boundary conditions, including temperature, electric field, and stress, are discussed in relation to device limitations. Third, the physical origins of the high piezoelectric properties and unique loss characteristics in relaxor-PT crystals are discussed with respect to their crystal structure, phase, engineered domain configuration, macrosymmetry, and domain size. Finally, relaxor-PT single crystals are reviewed with respect to specific applications and contrasted to conventional piezoelectric ceramics.
|
|||
|
Show PACS
|
|||
|
|
Electromechanical phenomena in semiconductor nanostructures J. Appl. Phys. 109, 031101 (2011); http://dx.doi.org/10.1063/1.3533402 (24 pages) Online Publication Date: 9 February 2011
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Electromechanical phenomena in semiconductors are still poorly studied from a fundamental and an applied science perspective, even though significant strides have been made in the last decade or so. Indeed, most current electromechanical devices are based on ferroelectric oxides. Yet, the importance of the effect in certain semiconductors is being increasingly recognized. For instance, the magnitude of the electric field in an AlN/GaN nanostructure can reach 1–10 MV/cm. In fact, the basic functioning of an (0001) AlGaN/GaN high electron mobility transistor is due to the two-dimensional electron gas formed at the material interface by the polarization fields. The goal of this review is to inform the reader of some of the recent developments in the field for nanostructures and to point out still open questions. Examples of recent work that involves the piezoelectric and pyroelectric effects in semiconductors include: the study of the optoelectronic properties of III-nitrides quantum wells and dots, the current controversy regarding the importance of the nonlinear piezoelectric effect, energy harvesting using ZnO nanowires as a piezoelectric nanogenerator, the use of piezoelectric materials in surface acoustic wave devices, and the appropriateness of various models for analyzing electromechanical effects. Piezoelectric materials such as GaN and ZnO are gaining more and more importance for energy-related applications; examples include high-brightness light-emitting diodes for white lighting, high-electron mobility transistors, and nanogenerators. Indeed, it remains to be demonstrated whether these materials could be the ideal multifunctional materials. The solutions to these and other related problems will not only lead to a better understanding of the basic physics of these materials, but will validate new characterization tools, and advance the development of new and better devices. We will restrict ourselves to nanostructures in the current article even though the measurements and calculations of the bulk electromechanical coefficients remain challenging. Much of the literature has focused on InGaN/GaN, AlGaN/GaN, ZnMgO/ZnO, and ZnCdO/ZnO quantum wells, and InAs/GaAs and AlGaN/AlN quantum dots for their optoelectronic properties; and work on the bending of nanowires have been mostly for GaN and ZnO nanowires. We hope the present review article will stimulate further research into the field of electromechanical phenomena and help in the development of applications.
|
|||
|
Show PACS
|
|||
|
|
Plasmonics: Localization and guiding of electromagnetic energy in metal/dielectric structures J. Appl. Phys. 98, 011101 (2005); http://dx.doi.org/10.1063/1.1951057 (10 pages) Online Publication Date: 11 July 2005
Full Text:
Read Online (HTML)
|
Download PDF
|
|||||||||||||||||||
|
Show Abstract
We review the basic physics of surface-plasmon excitations occurring at metal/dielectric interfaces with special emphasis on the possibility of using such excitations for the localization of electromagnetic energy in one, two, and three dimensions, in a context of applications in sensing and waveguiding for functional photonic devices. Localized plasmon resonances occurring in metallic nanoparticles are discussed both for single particles and particle ensembles, focusing on the generation of confined light fields enabling enhancement of Raman-scattering and nonlinear processes. We then survey the basic properties of interface plasmons propagating along flat boundaries of thin metallic films, with applications for waveguiding along patterned films, stripes, and nanowires. Interactions between plasmonic structures and optically active media are also discussed.
|
||||||||||||||||||||
|
Show PACS
|
||||||||||||||||||||
|
|
Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells J. Appl. Phys. 113, 044515 (2013); http://dx.doi.org/10.1063/1.4788827 (16 pages) Online Publication Date: 29 January 2013
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
Cross section electron-beam induced current (EBIC) and illumination-dependent current voltage (IV) measurements show that charge carrier transport in Cu(In,Ga)Se2 (CIGSe)/CdS/ZnO solar-cells is generation-dependent. We perform a detailed analysis of CIGSe solar cells with different CdS layer thicknesses and varying Ga-content in the absorber layer. In conjunction with numerical simulations, EBIC and IV data are used to develop a consistent model for charge and defect distributions with a focus on the heterojunction region. The best model to explain our experimental data is based on a p+ layer at the CIGSe/CdS interface leading to generation-dependent transport in EBIC at room temperature. Acceptor-type defect states at the CdS/ZnO interface cause a significant reduction of the photocurrent in the red-light illuminated IV characteristics at low temperatures (red kink effect). Shallow donor-type defect states at the p+ layer/CdS interface of some grains of the absorber layer are responsible for grain specific, i.e., spatially inhomogeneous, charge carrier transport observed in EBIC.
|
|||
|
Show PACS
|
|||
|
|
Ion and electron irradiation-induced effects in nanostructured materials J. Appl. Phys. 107, 071301 (2010); http://dx.doi.org/10.1063/1.3318261 (70 pages) Online Publication Date: 6 April 2010
Full Text:
Read Online (HTML)
|
Download PDF
|
|||||||||||||||
|
Show Abstract
A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.
|
||||||||||||||||
|
Show PACS
|
||||||||||||||||
|
|
J. Appl. Phys. 113, 043928 (2013); http://dx.doi.org/10.1063/1.4789613 (11 pages) Online Publication Date: 31 January 2013
Full Text:
Read Online (HTML)
|
Download PDF
|
||
|
Show Abstract
The magnetic characterization technique of hysteretic materials based on the measurement of the first-order reversal curves (FORC) is one of the most appealing methods recently introduced in hundreds of new laboratories, but due to the complexity of the FORC data analysis, it is not always properly used. This method originated in identification procedures for the classical Preisach model and consequently often the FORC distribution is interpreted as a slightly distorted Preisach distribution. In this paper, we discuss this idea from two points of view derived from the basic assumptions used in the Preisach model. One is that the interaction field is equivalent with a shift of the rectangular hysteron along the applied field axis without changing the intrinsic coercivity. The other is the direct use of switching fields as coordinates, in fact, the ones defining the Preisach plane. We discuss the compatibility between the experimental FORC distribution and the Preisach model developed on the interaction field hypothesis. As a “toy model,” we are using a system of ferromagnetic nanowires, explaining from the physical point of view the complex FORC diagrams as they are obtained in experiments. This explanation gives a fundament for the correct interpretation of the FORC diagram in order to get “Preisach type” information about the system, mainly about the distributions of coercive and interaction fields within the sample. These results are relevant for many ferromagnetic systems and give a valuable guide for understanding the FORC technique and its fundamental link with the Preisach model.
|
|||
|
Show PACS
|
|||
This Publication
Scitation
Google Scholar
PubMed