Influence of hydrogen on interstitial iron concentration in multicrystalline silicon during annealing steps

Philipp Karzel, Alexander Frey, Susanne Fritz, and Giso Hahn

Partial Abstract:The influence of in-diffusing atomic H into an annealed multicrystalline silicon wafer on the concentration of interstitial iron [Fei] was investigated. Neighboring wafers with similar initial [Fei] were annealed with and without in-diffusing H.

J. Appl. Phys. 113, 114903 (2013)

Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation

M. Lanza, Y. Wang, A. Bayerl, T. Gao, M. Porti, M. Nafria, H. Liang, G. Jing, Z. Liu, Y. Zhang, Y. Tong, and H. Duan

Partial Abstract:Graphene grown by chemical vapor deposition can be used as the conductive channel in metal oxide semiconductor field effect transistors, metallic electrodes in capacitors, etc. However, substrate-induced corrugations and strain-related wrinkles formed on the graphene layer impoverish the properties of these devices by lowering the conductance and increasing their variability.

J. Appl. Phys. 113, 104301 (2013)

What does a first-order reversal curve diagram really mean? A study case: Array of ferromagnetic nanowires

Costin-Ionuţ Dobrotă and Alexandru Stancu

Partial Abstract:The magnetic characterization technique of hysteretic materials based on the measurement of the first-order reversal curves (FORC) is one of the most appealing methods recently introduced in hundreds of new laboratories, but due to the complexity of the FORC data analysis, it is not always properly used. This method originated in identification procedures for the classical Preisach model and consequently often the FORC distribution is interpreted as a slightly distorted Preisach distribution. In this paper, we discuss this idea from two points of view derived from the basic assumptions used in the Preisach model.

J. Appl. Phys. 113, 043928 (2013)

Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment

M. Brihoum, R. Ramos, K. Menguelti, G. Cunge, E. Pargon, and O. Joubert

Partial Abstract:HBr plasma treatments are widely used in nanoscale lithographic technologies to increase the plasma etch resistance of 193 nm photoresist masks as well as to decrease their Line Width Roughness (LWR). VUV irradiation of the photoresist is known to play a major role in this process by inducing polymer chains rearrangement and finally LWR reduction.

J. Appl. Phys. 113, 013302 (2013)

Strain assisted inter-diffusion in GaN/AlN quantum dots

C. Leclere, V. Fellmann, C. Bougerol, D. Cooper, B. Gayral, M. G. Proietti, H. Renevier, and B. Daudin

Partial Abstract: The structural and optical properties of high temperature-annealed superlattices of GaN quantum dots embedded in AlN barrier have been studied by a combination of X-ray techniques (reciprocal space mapping, multiwavelength anomalous diffraction, and diffraction anomalous fine structure), high resolution transmission electron microscopy, and photoluminescence spectroscopy. Taking advantage of the disentangling of the chemical and structural information provided by the simultaneous use of X-ray absorption and diffraction data obtained in a synchrotron environment, we provide quantitative determination of strain and composition for each different region of the nanostructures.

J. Appl. Phys. 113, 034311 (2013)